The GaAs-InGaAsP heterointerfaces formation have been studied and optimized using a direct intermolecular wafer bonding (fusion)of an active region heterostructure on an InP substrate and distributed Bragg reflector heterostructures on GaAs substrates for the fabrication of hybrid heterostructures of long-wave vertical-cavity surface-emitting lasers (VCSEL). The heterostructures were grown by solid-source molecular beam epitaxy. It was shown that in the case of incomplete removal of oxide films during the preparation of the wafers before fusion and/or the presence of adsorbed water on the wafer surfaces, the fused interface contains a large number of amorphous inclusions, most likely related to the III-group oxides. Optimization of the formation regimes of a buried tunnel junction on the surface of the InP-based heterostructure made it possible to reduce the surface roughness down to 1 nm and to ensure the thickness of the GaAs-InGaAsP fused interface < 5 nm, with no dislocations or other extended defects in the region of the fused heterointerfaces. The 1.55 μm-range VCSELs fabricated from the hybrid heterostructures created by using the developed technology demonstrate efficient lasing under continuous wave pumping over a wide temperature range, which indicates the high optical quality of the fused heterointerfaces in the VCSEL heterostructure.
Представлены результаты исследования серии полупроводниковых полосковых лазеров спектрального диапазона 1550 nm, изготовленных из гетероструктур с различными конструкциями усиливающей среды. Показано,что предложенные конструкции усиливающей среды позволяют получить лазерную генерацию при высоком уровне суммарных оптических потерь, сопоставимых с типичными потерями, характерными для вертикально-излучающих лазеров. Проведенная оценка модального усиления различных типов усиливающей среды позволила оценить возможные частоты малосигнальной модуляции вертикально-излучающих лазеров и предложить пути их увеличения до 20 GHz и более.
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