It was found that the silicon preliminarily doped with a high concentration of phosphorus during the diffusion of gallium, there is a significant increase in the solubility of the gallium. The results obtained are explained by the interaction of gallium and phosphorus atoms, as a result of which quasi-neutral molecules [P+Ga-] are formed. It is assumed that the formation of such quasineutral molecules [P+Ga–] stimulates the formation of Si2GaP binary unit cells in the silicon lattice. It is shown that a sufficiently high concentration of such unit cells can lead to a significant change in the electrophysical parameters of silicon, i.e. the possibility of obtaining a new material based on silicon.
Исследов алась диффузия из слоя фосфида галлия GaP, напыленного на поверхность кремния. После диффузии образцы кремния исследовались методом Ван-дер-Пау и с помощью сканирующего электронного микроскопа, с целью определения концентрационного распределения примесных атомов фосфора и галлия. Ключевые слова: диффузия, фосфид галлия, кремний, растворимость, концентрация, бинарные комплексы.
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