The results of the experimental study and theoretical simulation of the photoluminescence (PL) spectra of strained germanium microbridges with improved heat sink are reported. It was shown that in the structures under study the main contribution to the PL signal of micro-bridges is provided by the radiative transitions from Г-valley to the valence band in the whole considered temperature range (from 80 to 300 K). The influence of interference and self-absorption effects on the shape of the PL spectra of Ge microbridges is discussed. It was demonstrated that Ge microbridges with improved heat sink which was achieved due to the adhesion of the bridges to the underlying layers due to capillary forces are not subjected to the additional stretching as the temperature decreases in contrast to the suspended ones.
In this work formation of locally strained Ge structures on SOI substrates is reported and their optical properties are discussed. Suspended Ge structures were fabricated by optical lithography, plasmachemical and wet chemical etching using the “stress concentration” approach. The fabrication procedure of suspended structures were modified in such a way to provide the mechanical contact between them and the underlying layers so improving the heat dissipation from them. SOI substrates with top Si layer being only 100 nm thick were utilized in such fabrication scheme. The decrease of local heating in such kind of structures was confirmed by the study of micro-Raman scattering depending of scanning laser power. Micro-photoluminescence measurements have shown the remarkable enhancement of the integrated intensity from locally strained areas of a microstructure. It was also shown that structures brought in contact with underlying layers could sustain much higher pumping power densities without fracture as compared to the suspended ones.
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