We have synthesized oxygen-doped graphite-like carbon nitride (g-C_3N_4) by the thermal treatment of the thiourea at 450–550°C. With an increase in the annealing temperature, the oxygen concentration in g-C_3N_4 increases, and the band-gap of the material decreases from 2.64 to 2.47 eV. The semiconductor properties of g-C_3N_4 doped with oxygen are confirmed by its high photocatalytic activity, determined by decoloration of a Rhodamine B aqueous solution in the presence of g-C_3N_4 upon irradiation with visible light.
Study of structural, optical and photocatalytic properties of multilayered (1–8 layers) zinc oxide films deposited on glass substrates by sol-gel method showed, that after thermal treatment at 500°C they consist of random oriented hexagonal crystalline grains with size of 34–40 nm, forming larger particles with sizes of 100–150 nm, which do not depend on number of layers. With an increase in the number of layers, the intensity of exciton photoluminescence decreases by a factor of 10, the absorption of light in the visible and near IR ranges increases, and the efficiency of photocatalytic decomposition of the test organic dye rhodamine B increases by 10–12%. The observed changes are related to the increase in the total area of grain boundaries and to the change in the integral amount of oxygen vacancies and interstitial atoms as the number of layers increases, which makes it possible to control the properties of zinc oxide films for applications in optoelectronics, photovoltaics and photocatalysis.
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