The experimental dependences of the GaPx As1−x
solid solution phosphorus proportion on growth conditions by
molecular beam epitaxy from As2 and P2 molecules on GaAs(001)
substrate were described using the phenomenological model.
The model was built on the well-established ideas about the
III−V compounds MBE growth. The ratio of the arsenic and
phosphorus atoms incorporation coefficients was considered as a
function of the substrate temperature and molecular flux densitys.
Empirical expressions were found that describe the behavior of the
arsenic and phosphorus incorporation coefficients ratio depending
on the indicated growth parameters. This makes it possible to
estimate the V group molecule flux values to obtain the required x
in a GaPx As1−x solid solution at the given substrate temperature
and the gallium atoms flow density.
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