Mетодами дифференциально-термического (ДТА), рентгенофазового (РФА), микроструктурного (МСА) анализа, а также измерения микротвердости и плотности, исследована система As2Se3-In2Te3 и построена Т - х фазовая диаграмма. Система As2Sе3-In2Te3 является квазибинарным сечением тройной взаимной системы As,In//Sе,Te. Cоединение In2As2Se3Te3 кристаллизуется в тетрагональной сингонии с параметрами решетки: а =9,40; с =6,36 Å, плотность ρпикн.=5,36 г/см3, ρрент.=5,85 г/см3. В системе образуется одно инконгруэнтное соединение In2As2Sе3Te3,плавящееся при 620оС. Выявлено, что в системе твердые растворы на основе In2Te3 доходят до 3 мол. %, а на основе As2Sе3 практически не обнаружены. В системе при медленном охлаждении область стеклообразования на основе As2Sе3 доходит до 7 мол. % In2Te3, а в режиме закалки в ледяной воде около 12 мол. % In2Te3. By the methods of differential thermal (DTA), X-ray phase (XRD), microstructural (MSA) analysis, as well as measurements of microhardness and density, the As2Se3-In2Te3 system was investigated and the T-x phase diagram was constructed. The As2Sе3-In2Te3 system is a quasi-binary section of the ternary reciprocal system As, In // Se, Te. One incongruent compound In2As2Sе3Te3 is formed in the system, melting at 620оС. Compound In2As2Sе3Te3 crystallizes in the tetragonal system with lattice parameters: a = 9.40; с = 6.36 Å, density ρpycn. = 5.36 g/cm3, ρX-rey. = 5.85 g/cm3. It was found that in the system, solid solutions based on In2Te3 reach 3 mol. %, and practically not found on the basis of As2Sе3. In the system, upon slow cooling, the glass formation region based on As2Se3 reaches 7 mol. % In2Te3, and in the mode of quenching in ice water about 12 mol. % In2Te3.
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