Carried out were investigations of methods for passivating and protecting p-n junctions in points of their exit on the side mesa structure surface and for sealing hermetically multijunction solar cells based on the GaInP/GaAs/Ge heterostructure. Study of protecting coatings based on silicon nitride layers and on silicone by analyzing dark I-V characteristics of solar cells and by estimating the electroluminescence distribution has been performed.
Investigation of the heterostructure plasmachemical etching technology for fabricating multi-junction photovoltaic converters has been carried out. The dividing mesa-structure forming stage at different etching regimes and subsequent disturbed layer removing by liquid chemical treatment has been reviewed. The influence of mesa etching methods on cells photovoltaic characteristics has been investigated. Developed was the technology of photovoltaic converters fabrication with low current leakage values less than 10-9 A at voltage less then 1 V with high resistance to degradation.
Investigations and modeling of ohmic contacts electrochemical deposition process in postgrowth technology of photovoltaic converters fabrication have been carried out. The technology of Ag/Au contact system galvanic deposition at vertical and horizontal position of heterostructure and anode in the electrolyte has been developed. The increase of contact system deposition uniformity up to ∼ 95% at the thickness of contact bus-bars ∼ 5 µm on the heterostructure area with 4 inch diameter has been archived.
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