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The mono- and polycrystalline films of the SnTe1+x semiconducting phase with controlled content of nonstoichiometric defects (NSD) were grown by thermal evaporation and hot wall epitaxy methods from the charges of different composition. The concentration of NSD was determined using X-Ray diffraction method and the measurements of carrier density. The temperature dependences of electrical conductivity and Hall coefficient were obtained in the temperature range of 77 - 300 K. The best results were obtained for hot wall epitaxy method: the perfect monocrystalline films with NSD content corresponding to x =0-0,025 and high mobility of charge carriers were grown.

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A compact helium combi-cryostat (bath+ continuous flow) was designed and manufactured for the purposes of studying samples using x-ray diffraction.

The X‐ray optical system of in situ monitoring of reflectivity measured in the short‐wave range 0.5–3 Å is proposed. Thickness, density, and microroughness of the growing film are determined for every half‐wave of reflectivity oscillations that corresponds to the averaging by the layer of 10 Å thickness. By the example of diamond‐like film growing, the possibility of an analysis of transition processes and technology failure during film growth have been shown.