A detailed numerical study of dynamical behavior of a semiconductor laser under current modulation and cavity detuning has been performed on the base of four different models of the active medium which take into account direct transitions between ground subbands, transitions with no k-selection rule between ground subbands and contribution of excited subbands in each of the abovementioned cases. We have shown that different nonlinear regimes (period doubling, chaos, generalized bistability) can be obtained either with cavity detuning from the gain band maximum or near the laser threshold. It has been established that the shape and principal peculiarities of amplitude detuning characteristics are determined by the relation between the current modulation frequency and maximum resonance frequency of the laser.

Different types of synchronization: in-phase, antiphase, phase, and lag synchronization, as well as amplitude death have been found theoretically in a dual-wavelength class-B laser with modulated losses in one of the channels. Depending on the laser parameters, oscillations in master and slave channels can be either completely or partially synchronized. The conditions for the dual-wavelength regime have been established. The analysis has been performed on the basis of transfer functions of the master and slave channels.

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