In the p-type thermoelectrics based on bismuth chalcogenides and antimony with an excess bismuth, the density of states effective mass m/m0 increases in nanocomposite and nanostructured solid solutions compared with the base material obtained by the direct crystallization method. It is shown that an increase in m/m0 is associated with an increase in the effective scattering parameter reff and amplifying the relaxation time of energy, which is typical for topological insulators. The material parameter beta, proportional to the thermoelectric efficiency of ZT, at temperatures below room increases stronger in nanostructured composition than in a nanocomposite with the inclusions of SiO2 due to the growth of m/m0 and decrease the lattice thermal conductivity κL. At high temperatures in the range of 300-500 to the greatest growth of the parameter beta in the base material associated with higher mobility.
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