The current status of developments in the field of ferroelectric memory devices has been consid ered. The rapidly growing market of non volatile memory devices has been analyzed, and the current state of the art and prospects for the scaling of parameters of non volatile memory devices of different types have been considered. The basic constructive and technological solutions in the field of the design of ferroelectric mem ory devices, as well as the "roadmaps" of the development of this technology, have been discussed.
The authors consider the infrared divergences caused by the electron interaction with mass-density waves (MDW) in the presence of strong static disorder localizing the states of the defects. The temperature dependence of the MDW contribution to the electrical resistance is obtained. The minimum resistance evoked by the electron-MDW scattering is found.
We investigate the transport properties of thin-film transistors using indium oxide (In2O3)/gallium oxide (Ga2O3) bi-layer stacks as the channel material. At low gate bias, we observe the transistor field-effect mobility increases with the film resistivity to μFE = 51.3 cm2/Vs and ON/OFF current ratio to 108 due to combinatorial layer thickness modulation. With the Ga2O3 layer thickness ratio increase to R = 14.35%, these observations are accompanied with one-order-of-magnitude reduction in the transistor subthreshold swing to 0.38 V/decade and suggest a trap-limited conduction mechanism upon which the reduced scattering centers due to annihilation of subgap states improve the device electric characteristics without post-growth annealing.
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