The regularities of silicon electrodeposition from the KF-KCl (2:1)—75 mol% KI melt containing 0.075 or 0.5 mol% of K2SiF6 on glassy carbon and tungsten at 998 K were studied by the cyclic voltammetry, chronoamperometry and scanning electron microscopy methods. The silicon nucleation/growth processes on glassy carbon were analyzed in the framework of two theoretical models that imply diffusion controlled growth or kinetic (charge transfer) controlled growth. Continuous silicon nanofilms with good adhesion to the substrate were obtained by the electrodeposition under galvanostatic conditions. The reasons for the formation of Si films during electrodeposition from melts with potassium iodide were discussed.

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The electrical conductivity of the chloride PbCl2-CsCl (28.7–71.3 mol %) and CsCl (18.3 mol %)–PbCl2 (81.7 mol %) eutectics with the PbO additions ranging from 0.5 to 18.0 mol % was measured depending on temperature and lead oxide concentration. The electrical conductivity of the CsCl (18.3 mol %)–PbCl2 (81.7 mol %) melt is found to be two times higher than that of the CsCl (71.3 mol %)–PbCl2 (28.7 mol %) melt within the whole range of the studied lead oxide concentrations at the same temperature.