We had established that the non-monotonic magnetic relaxation appeared, when two or three magnetic fields, switching between stable magnetization states, coincide with each other, in Pt/Co/Ir/Co/Pt synthetic ferrimagnets with perpendicular magnetic anisotropy. Switching fields between stable magnetization states depend on sum of exchange interlayer energy, Zeeman energy and magnetization reversal energy barrier of each layer. This total energy depends on layers thickness and temperature. We had shown that with choose of temperature and free layer thickness we can achieve double or triple points on energy states diagram, which is reason of nonmonotonic magnetization relaxation.
We had found nonreciprocity of spin waves in Pt/Co/Ir/Co/Pt synthetic ferrimagnets by Brillouin light scattering technique. It is shown that the main contribution to the nonreciprocity of spin waves is made by the Dzyaloshinskii-Moriya interaction with an energy density D ≈ 1.7 - 2.3 erg/cm2. The energy density of the Dzyaloshinsky-Moriya interaction in Pt/Co/Ir/Co/Pt synthetic ferrimagnets is higher than its values in heterostructures with one Co layer Pt/Co(1 nm)/Ir ~ 1.4 erg/cm2. The D value of synthetic ferrimagnets decreases with increasing thickness of the Co thin layer.
In a Pt/Co/Ir/Co/Pt synthetic ferrimagnet with perpendicular magnetic anisotropy, stochastically occurring peak of magnetic moment was detected in the rapidly increasing magnetic field of 16 kOe / s sweep rate at T = 300 K. The peak arises at the coinciding switching fields between three equilibrium magnetization states. The reason of the peak is nucleation of the nonequilibrium magnetic domains in the vicinity of structural defects of the Co film, where diminished activation energy of magnetic nucleation takes place.
Методом ферромагнитного резонанса обнаружено увеличение константы анизотропии гетероструктуры [CoFeB/SiO2|Bi2Te3]47 под действием магнитных наночастиц Fe/Fe3O4, нанесенных на поверхность гетероструктуры, на 20%. Установлено, что слой наночастиц Fe/Fe3O4 толщиной ~27 nm на диамагнитной подложке GaAs обладает собственной магнитной анизотропией, вызванной магнитным дипольным взаимодействием между частицами. Слой наночастиц, связанных магнитным дипольным взаимодействием, образует эквивалентную магнитную пленку, поле рассеяния которой изменяет эффективную магнитную анизотропию гетероструктуры [CoFeB/SiO2|Bi2Te3]47. Ключевые слова: ферромагнитный резонанс, магнитная анизотропия, многослойные гетероструктуры, магнитное дипольное взаимодействие, наночастицы.
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