The dependences of the resistivity, magnetoresistance,and Hall coefficient on the sample thickness were studied forthin bismuth films on mica at 77 K. We discovered quantum sizeoscillations of electrical and galvanomagnetic properties for filmswith the thickness less than 50 nm. The charge carrier free path isestimated. The reasons for deviation of the observed experimentaldependences from the simple quantum size effect theory in thesemimetal films are discussed.
The effects of film thickness and block size on the Hall and Seebeck effects in bismuth films on mica substrates are analyzed using experimental data. A preferential decrease in the electron contribution with a decrease in the film thickness and a preferential decrease in the hole contribution with a decrease in the block size are established. The Hall and Seebeck coefficients are calculated using the classical size effect with regard to carrier scattering at block boundaries and anisotropy of the properties of carriers. In the calculation, the electron and hole mobility components and their concentration in a bismuth single crystal are used and the crystallographic orientation of the film crystal are taken into account. The results of the calculation are in good agreement with the experimental data. It is concluded that the value and sign of the Hall and Seebeck coefficients in bismuth films are determined by the competition of the classical size effect and scattering at block boundaries.
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