Expressions for the Auger- and radiative-recombination rates are derived in terms of Kane’s model for materials with a band-gap width close to the spin-orbit splitting energy, which is the case for InAs, InAsSb solid solutions, etc. Our results are compared with simplified expressions for recombination rates, frequently used in publications. It is shown that the nonparabolicity of the electronic structure should be taken into account in calculations of the recombination rates. As an example, the temperature dependences of the charge-carrier lifetimes governed by radiative and non-radiative processes are calculated for InAsSb solid solutions.
A detailed analysis of the mechanisms of radiative and
Auger recombination in type I and II heterostructures based on
narrow-gap AIIIBV materials is presented. It is shown that the
presence of a heterointerface fundamentally changes the nature of
these recombination processes differently, depending on the type
of heterojunction. Results of our study of the electroluminescence
of type I and II LED heterostructures based on InAs(Sb)/InAsSbP
quantum wells are presented. It is shown that the increase in
relative efficiency of radiative recombination in type II heterostructures
due to suppression of Auger recombination contributes to
generation of stimulated emission in these heterostructures at low
temperatures (4.2−70K).
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