THz spectroscopy has been applied to investigate the photo-induced and intrinsic conductivity in SnO2 nanowires using the Drude-Smith model. The refractive index of the nanowires was found to decrease from 2.4 to 2.1 with increasing THz frequency and the dc mobility of the non-excited nanowires was determined to be 72 ± 10 cm2/Vs. Measurements reveal that scattering times are carrier density dependent, while a strong suppression of long transport is evident. Intensity-dependent measurements provided an estimate of the Auger coefficient found to be γ = (7.2 ± 2.0) × 10−31 cm6/s.
Solution-processed semiconducting transition metal dichalcogenides are emerging as promising two-dimensional materials for photovoltaic and optoelectronic applications. Here, we have used transient absorption spectroscopy to provide unambiguous evidence and distinct signatures of photogenerated excitons and charges in solutionprocessed few-layer MoS 2 nanoflakes (10−20 layers). We find that photoexcitation above the direct energy gap results in the ultrafast generation of a mixture of free charges in direct band states and of excitons. While the excitons are rapidly trapped, the free charges are longlived with nanosecond recombination times. The different signatures observed for these species enable the experimental extraction of the exciton binding energy, which we find to be ∼80 meV in the nanoflakes, in agreement with reported values in the bulk material. Carrier-density-dependent measurements bring new insights about the many-body interactions between free charges resulting in band gap renormalization effects in the few-layer MoS 2 nanoflakes.
The growing number of applications of doped organic semiconductors drives the development of highly conductive and stable materials. Lack of understanding about the formation and properties of mobile charges limits the ability to improve material design. Thus the largely unexplored photophysics of doped systems are addressed here to gain insights about the characteristics of doping‐induced polarons and their interactions with their surroundings. The study of the ultrafast optical processes in a self‐doped conjugated polyelectrolyte reveals that polarons not only affect their environment via Coulomb effects but also strongly couple electronically to nearby neutral sites. This is unambiguously demonstrated by the simultaneous depletion of both the neutral and polaronic transitions, as well as by correlated excited state dynamics, when either transition is targeted during ultrafast experiments. The results contrast with the conventional picture of localized intragap polaron states but agree with revised models for the optical transitions in doped organic materials, which predict a common ground level for polarons and neighboring neutral sites. Such delocalization of polarons into the frontier transport levels of their surroundings could enhance the electronic connectivity between doped and undoped sites, contributing to the formation of conductive charges.
Exfoliated
transition metal dichalcogenides (2D-TMDs) are attractive
light-harvesting materials for large-area and inexpensive solar energy
conversion given their ability to form highly tolerant heterojunctions.
However, the preparation of large-area heterojunctions with these
materials remains a challenge toward practical devices, and the details
of photogenerated charge carrier harvesting are not well established.
In this work, we use all solution-based methods to prepare large-area
hybrid heterojunction films consisting of exfoliated semiconducting
2H-MoS2 flakes and a perylene-diimide (PDI) derivative.
Hybrid photoelectrodes exhibited a 6-fold improvement in photocurrent
compared to that of bare MoS2 or PDI films. Kelvin probe
force microscopy, X-ray photoelectron spectroscopy, and transient
absorption measurements of the hybrid films indicate the formation
of an interfacial dipole at the MoS2/organic interface
and suggest that the photogenerated holes transfer from MoS2 to the PDI. Moreover, performing the same analysis on MoSe2-based hybrid devices confirms the importance of proper valence band
alignment for efficient charge transfer and photogenerated carrier
collection in TMD/organic semiconductor hybrid heterojunctions.
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