CH3NH3PbX3 (MAPbX3)‐based perovskite has attracted tremendous research efforts in the last few years. With the discovery that the HC(NH2)2PbI3 (FAPbI3) perovskite offers even higher solar cell efficiency, better thermal stability, and broader optical absorption, it is expected that it will provide more excitement in optoelectronic applications including laser, LED, photodetector, etc. The development in preparing large Single‐Crystalline Formamidinium‐Perovskite FAPbI3 using the inverse‐temperature reactive crystallization process, and associated wafer‐slicing process is presented. The availability of the large Single‐Crystalline Formamidinium‐Perovskite Wafer makes it possible to fabricate integrated circuits. An array of 153 photodetectors on a piece of thin wafer, demonstrating feasibility of mass production of integrated circuits on the perovskite wafer is designed and prepared. It is found that the wafer‐based photodetector shows much superior performance, with 90 times higher photoresponse and broader optical absorption than its thin‐film perovskite counterpart.

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Single crystalline perovskites exhibit high optical absorption, long carrier lifetime, large carrier mobility, low trap-state-density and high defect tolerance. Unfortunately, all single crystalline perovskites attained so far are limited to bulk single crystals and small area wafers. As such, it is impossible to design highly demanded flexible single-crystalline electronics and wearable devices including displays, touch sensing devices, transistors, etc. Herein we report a method of induced peripheral crystallization to prepare large area flexible single-crystalline membrane (SCM) of phenylethylamine lead iodide (C6H5C2H4NH3)2PbI4 with area exceeding 2500 mm2 and thinness as little as 0.6 μm. The ultrathin flexible SCM exhibits ultralow defect density, superior uniformity and long-term stability. Using the superior ultrathin membrane, a series of flexible photosensors were designed and fabricated to exhibit very high external quantum efficiency of 26530%, responsivity of 98.17 A W−1 and detectivity as much as 1.62 × 1015 cm Hz1/2 W−1 (Jones).

We describe a facile approach to controllable assembly of monodisperse Fe(3)O(4) nanoparticles (NPs) on chemically reduced graphene oxide (rGO). First, reduction and functionalization of GO by polyetheylenimine (PEI) were achieved simultaneously by simply heating the PEI and GO mixture at 60 °C for 12 h. The process is environmentally friendly and convenient compared with previously reported methods. Meso-2,3-dimercaptosuccinnic acid (DMSA)-modified Fe(3)O(4) NPs were then conjugated to the PEI moiety which is located on the periphery of the GO sheets via formation of amide bonds between COOH groups of DMSA molecules bound on the surface of the Fe(3)O(4) NPs and amine groups of PEI. The magnetic GO composites were characterized by means of TEM, AFM, UV-vis, FTIR, Raman, TGA, and VSM measurements. Finally, preliminary results of using the Fe(3)O(4)-rGO composites for efficient removal of tetracycline, an antibiotic that is often found as a contaminant in the environment, are reported.

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X-ray detectors are extensively utilized, including in medical diagnosis, scientific research, and security screening. So far, X-ray detectors have been developed mainly on the basis of metal-based semiconductors. Recently, in addition to traditional Si, Cd(Zn)Te and Ge, crystals based on metal halide perovskites have emerged as a new generation of semiconductors for radiation detection due to their high-Z elements Pb, Bi, and Br. [1-3] However, the requirements for practical wearable materials to be lightweight, economically inexpensive, and environmentally friendly motivate the exploration for nontoxic, low-cost, and simple organic compounds. [4] Lightweight semiconductors based on conjugated molecules or polymers have been demonstrated in a proof-of-principle manner for direct X-ray detection, including 4-hydroxycyanobenzene (4HCB), 1,8-naphthaleneimide (NTI), 1,5-dinitronaphthalene, and rubrene. [5-7] However, the fabrication of large-scale crystals with exceptionally Metal-free halide perovskites, as a specific category of the perovskite family, have recently emerged as novel semiconductors for organic ferroelectrics and promise the wide chemical diversity of the ABX 3 perovskite structure with mechanical flexibility, light weight, and eco-friendly processing. However, after the initial discovery 17 years ago, there has been no experimental information about their charge transport properties and only one brief mention of their optoelectronic properties. Here, growth of large single crystals of metalfree halide perovskite DABCO-NH 4 Br 3 (DABCO = N-N′-diazabicyclo[2.2.2] octonium) is reported together with characterization of their instrinsic optical and electronic properties and demonstration, of metal-free halide perovskite optoelectronics. The results reveal that the crystals have an unusually large semigap of ≈16 eV and a specific band nature with the valence band maximum and the conduction band minimum mainly dominated by the halide and DABCO 2+ , respectively. The unusually large semigap rationalizes extremely long lifetimes approaching the millisecond regime, leading to very high charge diffusion lengths (tens of µm). The crystals also exhibit high X-ray attenuation as well as being lightweight. All these properties translate to high-performance X-ray imaging with sensitivity up to 173 µC Gy air −1 cm −2. This makes metal-free perovskites novel candidates for the next generation of optoelectronics.

⟨ 001 ⟩ -oriented (K0.5Na0.5)(Nb0.97Sb0.03)O3 (KNNS) ceramics with a narrow orientation distribution (full width at half maximum=7.0°) were produced by templated grain growth using NaNbO3 templates. Excellent electromechanical properties were obtained from −70 °C to the polymorphic phase transition (PPT) at 160 °C. Textured KNNS ceramics show very high electromechanical coupling factors kp=0.64 and k31=0.37, high piezoelectric constants d33=208–218 pC/N and d31=−82 pC/N, and modest strain hysteresis (6.3%) at room temperature. These properties are superior to those of randomly oriented KNN-based ceramics with similar PPT temperatures.

The phase transition behavior and piezoelectric properties of (Ba1−xCax)(Zr0.1Ti0.9)O3 and (Ba0.85Ca0.15)(ZryTi1−y)O3 ceramics were investigated in this work to find out the potential factors contributing to large piezoelectricity. It was found that the morphotropic phase boundary (MPB) of (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 ceramics was closely related to the presence of an intermediate phase (considered as orthorhombic phase in this work) between rhombohedral (R) and tetragonal (T) phases at a narrow region, which could be carefully adjusted by the temperature and contents of Ca and Zr in the composition. In addition, the maximum piezoelectric and electromechanical coupling coefficients (with d33 = 572 pC/N and kp = 0.57) were observed near the MPB region close to T phase side, which might be intimately related to the presence of the intermediate phase. This investigation yielded a new sight to understand the mechanism of enhanced piezoelectricity near the MPB.