A Weyl semimetal is a novel crystal with low-energy electronic excitations that behave as Weyl fermions. It has received worldwide interest and was believed to have opened the next era of condensed matter physics after graphene and three-dimensional topological insulators. Howev-er, it is not easy to obtain a single large-size crystal because there are many nucleations in the preparation process. Here, a bottom-seed CVT growth method is proposed in this paper, and we acquired the large-size, high-quality NbAs single crystals up to 5x4x4 mm3 finally. X-ray diffrac-tion and STEM confirmed that they are tetragonal NbAs, which the key is to use seed crystal in vertical growth furnace. Notably, the photoelectric properties of the crystal are obtained under the existing conditions, which paves the way for the follow-up work.
A Weyl semimetal is a novel crystal with low-energy electronic excitations that behave as Weyl fermions. It has received worldwide interest and was believed to have introduced the next era of condensed matter physics after graphene and three-dimensional topological insulators. However, it is not easy to obtain a single large-sized crystal because there are many nucleations in the preparation process. A bottom-seed CVT growth method is proposed in this paper, and we acquired the large-sized, high-quality NbAs single crystals up to 4 × 3 × 3 mm3 finally. X-ray diffraction and STEM confirmed that they are tetragonal NbAs, which the key is to using the seed crystal in a vertical growth furnace. Notably, the photoelectric properties of the crystal are obtained under the existing conditions, which paves the way for follow-up work.
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) draw much attention as critical semiconductor materials for 2D, optoelectronic, and spin electronic devices. Although controlled doping of 2D semiconductors can also be used to tune their bandgap and type of carrier and further change their electronic, optical, and catalytic properties, it remains an ongoing challenge. Here, we successfully doped a series of metal elements (including Hf, Zr, Gd, Dy) into the monolayers MoS2 through a single-step chemical vapor transport (CVT), and the atomic embedded structure is confirmed by scanning transmission electron microscope (STEM) with a probe corrector measurement. In addition, the host crystal is well preserved, and no random atomic aggregation is observed. More importantly, adjusting the band structure of MoS2 enhanced fluorescence and carrier effect. This work provides a growth method for doping nonlike elements into 2D MoS2 and potentially many other 2D materials to modify their properties.
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