Uniform and continuous Al2O3 thin films were prepared by the chemical liquid deposition (CLD) method. The breakdown field strength of the amorphous CLD-Al2O3 film is 1.74 MV/cm, making it could be used as a candidate dielectric film for electronic devices. It was further proposed to use the CLD-Al2O3 film as an electron blocking layer in a triboelectric nanogenerator (TENG) for output performances enhancement. Output voltages and currents of about 200 V and 9 µA were obtained, respectively, which were 2.6 times and 3 times, respectively, higher than TENG device without an Al2O3. A colloidal condensation-based procedure controlled by adjusting the pH value of the solution was proposed to be the mechanism of CLD, which was confirmed by the Tyndall effect observed in the growth liquid. The results indicated that the CLD could serve as a low-cost, room temperature, nontoxic and facile new method for the growth of functional thin films for semiconductor device applications.
A dephosphorisation technology using CaO-based flux during the tapping process of basic oxygen furnace (BOF) converter was developed by metallurgists. In order to understand the dephosphorisation mechanism during this process, laboratory experiments were carried out using industrial BOF crude steel and some CaO-based fluxes. It was found that the dephosphorisation behaviour of CaO in BOF crude steel differs from that of the dephosphorisation processes of hot metal. Owing to the lack of liquid phase, the efficiency of dephosphorisation using pure CaO is relatively low. The formation of 2CaO•SiO 2 phase is also crucial, but the low Si content in BOF crude steel restricts the formation of 2CaO•SiO 2 -3CaO•P 2 O 5 (C 2 S-C 3 P), thus affects the dephosphorisation efficiency. Kinetically, suitable addition of SiO 2 and FeO x can accelerate the dissolution of the flux; and thermodynamically, the addition of SiO 2 is helpful for the formation of C 2 S-C 3 P, resulting in a better dephosphorisation efficiency.
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