Most van der Waals crystals present highly anisotropic optical responses due to their strong in-plane covalent bonding and weak out-of-plane interactions. However, the determination of the polarization-dependent dielectric constants of van der Waals crystals remains a nontrivial task, since the size and dimension of the samples are often below or close to the diffraction limit of the probe light. In this work, we apply an optical nano-imaging technique to determine the anisotropic dielectric constants in representative van der Waals crystals. Through the study of both ordinary and extraordinary waveguide modes in real space, we are able to quantitatively determine the full dielectric tensors of nanometer-thin molybdenum disulfide and hexagonal boron nitride microcrystals, the most-promising van der Waals semiconductor and dielectric. Unlike traditional reflection-based methods, our measurements are reliable below the length scale of the free-space wavelength and reveal a universal route for characterizing low-dimensional crystals with high anisotropies.
Accessing the nonradiative near-field electromagnetic interactions with high in-plane momentum (q) is the key to achieve super resolution imaging far beyond the diffraction limit. At far-infrared and terahertz (THz) wavelengths (e.g., 300 μm = 1 terahertz = 4 meV), the study of high q response and nanoscale near-field imaging is still a nascent research field. In this work, we report on THz nanoimaging of exfoliated single and multilayer graphene flakes by using a state-of-the-art scattering-type near-field optical microscope (s-SNOM). We experimentally demonstrated that the single layer graphene is close to a perfect near-field reflector at ambient environment, comparable to that of the noble metal films at the same frequency range. Further modeling and analysis considering the nonlocal graphene conductivity indicate that the high near-field reflectivity of graphene is a rather universal behavior: graphene operates as a perfect high-q reflector at room temperature. Our work uncovers the unique high-q THz response of graphene, which is essential for future applications of graphene in nano-optics or tip-enhanced technologies.
We report the development of novel Mixed Lineage Kinase Domain-Like protein (MLKL) inhibitors with single nanomolar potency (compound 15 is also named as TC13172). Using the converting biochemistry to chemistry activity-based protein profiling (BTC-ABPP) method, we were able to determine that the inhibitors covalently bind to Cysteine86 (Cys-86) of MLKL. This is the first example of the use of LC-MS/MS to identify the binding site of an MLKL inhibitor. The novel MLKL inhibitors provide powerful tools to study the biological function of MLKL and demonstrate that MLKL should be viewed as a druggable target.
The Mott insulator Ca 2 RuO 4 is the subject of much recent attention following reports of emergent nonequilibrium steady states driven by applied electric fields or currents. In this paper, we carry out infrared nano-imaging and optical-microscopy measurements on bulk single crystal Ca 2 RuO 4 under conditions of steady current flow to obtain insight into the current-driven insulator-tometal transition. We observe macroscopic growth of the current-induced metallic phase, with nucleation regions for metal and insulator phases determined by the polarity of the current flow. A remarkable metal-insulator-metal microstripe pattern is observed at the phase front separating metal and insulator phases. The microstripes have orientations tied uniquely to the crystallographic axes, implying a strong coupling of the electronic transition to lattice degrees of freedom. Theoretical modeling further illustrates the importance of the current density and confirms a submicron-thick surface metallic layer at the phase front of the bulk metallic phase. Our work confirms that the electrically induced metallic phase is nonfilamentary and is not driven by Joule heating, revealing remarkable new characteristics of electrically induced insulator-metal transitions occurring in functional correlated oxides.
Modern scattering-type scanning near-field optical microscopy (s-SNOM) has become an indispensable tool in material research. However, as the s-SNOM technique marches into the far-infrared (IR) and terahertz (THz) regimes, emerging experiments sometimes produce puzzling results. For example, "anomalies" in the near-field optical contrast have been widely reported. In this letter, we systematically investigate a series of extreme subwavelength metallic nanostructures via s-SNOM near-field imaging in the GHz to THz frequency range. We find that the near-field material contrast is greatly impacted by the lateral size of the nanostructure, while the spatial resolution is practically independent of it. The contrast is also strongly affected by the connectivity of the metallic structures to a larger metallic "ground plane". The observed effect can be largely explained by a quasi-electrostatic analysis. We also compare the THz s-SNOM results to those of the mid-IR regime, where the size-dependence becomes significant only for smaller structures. Our results reveal that the quantitative analysis of the near-field optical material contrasts in the long-wavelength regime requires a careful assessment of the size and configuration of metallic (optically conductive) structures.
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