F implantation (80–175 keV) induced GaAs/InGaP quantum well disordering was performed in a conventional furnace at 600–750 °C and in lamp annealing at 850 °C. Group V intermixing is found to be substantially enhanced for certain implantation and anneal conditions. Either the group III intermixing leading to lower band gaps or group V intermixing leading to higher band gaps may be made to dominate by choosing the process conditions. Only 50% reduction in integrated luminescence intensities from the as-grown layer makes this quantum well disordering process suitable for device fabrication.
Strong enhancement in the luminescence intensity is observed in Al0.22Ga0.78As epitaxial layers grown on misoriented (111)B GaAs at 630 °C. For 3° misorientation, the luminescence intensity is almost 10 times that of (100) layers and the luminescence efficiency is an order of magnitude stronger than that of (100). (100) Al0.4Ga0.6As/GaAs quantum well laser diode structures grown under identical conditions with a low threshold current density of 150 A/cm2 are indications of excellent AlGaAs material quality. Electron mobility for 3° misoriented (111) Al0.25Ga0.75As is about 10% higher than that for side-by-side grown (100). The strong luminescence associated with a large red shift of 90 meV, the 10% mobility enhancement, and wirelike structure shown in transmission electron microscopy are indicative of the natural formation of quantized structures.
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