Brain-inspired computing is an emerging field, which intends to extend the capabilities of information technology beyond digital logic. The progress of the field relies on artificial synaptic devices as the building block for brainlike computing systems. Here, we report an electronic synapse based on a ferroelectric tunnel memristor, where its synaptic plasticity learning property can be controlled by nanoscale interface engineering. The effect of the interface engineering on the device performance was studied. Different memristor interfaces lead to an opposite virgin resistance state of the devices. More importantly, nanoscale interface engineering could tune the intrinsic band alignment of the ferroelectric/metal-semiconductor heterostructure over a large range of 1.28 eV, which eventually results in different memristive and spike-timing-dependent plasticity (STDP) properties of the devices. Bidirectional and unidirectional gradual resistance modulation of the devices could therefore be controlled by tuning the band alignment. This study gives useful insights on tuning device functionalities through nanoscale interface engineering. The diverse STDP forms of the memristors with different interfaces may play different specific roles in various spike neural networks.
The development of in-memory computing has opened up possibilities to build next-generation non-von-Neumann computing architecture. Implementation of logic functions within the memristors can significantly improve the energy efficiency and alleviate the bandwidth congestion issue. In this work, the demonstration of arithmetic logic unit functions is presented in a memristive crossbar with implemented non-volatile Boolean logic and arithmetic computing. For logic implementation, a standard operating voltage mode is proposed for executing reconfigurable stateful IMP, destructive OR, NOR, and non-destructive OR logic on both the word and bit lines. No additional voltages are needed beyond "V P " and its negative component. With these basic logic functions, other Boolean functions are constructed within five devices in at most five steps. For arithmetic computing, the fundamental functions including an n-bit full adder with high parallelism as well as efficient increment, decrement, and shift operations are demonstrated. Other arithmetic blocks, such as subtraction, multiplication, and division are further designed. This work provides solid evidence that memristors can be used as the building block for in-memory computing, targeting various low-power edge computing applications.
In this work, the self-assembly behavior of cetyltrimethylammonium bromide (CTAB) on the surface of citrate-capped gold nanoparticles (AuNPs) in solution has been studied by UV−vis absorption spectroscopy, fluorescence probe techniques, ζ potentiometric methods, transmission electron microscopy, etc. The UV−vis spectra show that the color with the increase of CTAB for the mixture containing CTAB and a given amount of AuNPs changes from red to blue and then to red.The absolute value of ζ potential corresponding to this color change decreases initially and then increases. Specially, the reversible color change, from red to blue and then to red, could be observed only in the case of a gradual addition of a AuNP solution to a CTAB solution; however, this reversible change is not suitable for the mixture formed in a reverse order of mixing. The results from pyrene used as the fluorescence probe indicate that the features in the fluorescence spectrum (including fluorescence quenching, I 1 /I 3 , and the excimer) well correspond to those from the UV−vis spectrum mentioned above. Based on the experimental results, the mechanism of the assembly structure variation of CTAB on the surface of negatively charged AuNPs was proposed. For a given amount of AuNPs, the assembly structure of CTAB on the surface of AuNPs undergoes the transformation from a monolayer to a bilayer with the increase of CTAB. In the case of the concentration of CTAB far beyond its critical micelle concentration (CMC) and the higher ratio of CTAB and AuNPs, there is a possibility of the formation of an extra micellar structure only after the formation of a double-layer structure.
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