With the development of science and technology, backfill technology has made continuous progress, and the traditional backfill method is no longer suitable for various complicated practical engineering situations. Therefore, researchers in the field of backfill mining have gradually shifted their research focus to the study of high-concentration backfill, and Chinese researchers are no exception. In order to solve the problems caused by the traditional backfill method, China began to vigorously develop high-concentration backfill in recent years, and achieved a lot of results. In this paper, some important achievements made by Chinese researchers on high-concentration backfill in recent years are reviewed; it also presents a summary report of the latest research results from several key laboratories across China. Therefore, this paper reviews the development progress of high-concentration backfill China has made, of which the main contents include: (1) research progress of the high-concentration backfill theory in China; and (2) research progress of high-concentration backfill equipment in China. Finally, we claim that this paper serves just as a guide to start a conversation, and we hope many more experts and scholars will be interested and engage in the research of this field.
Silicon-On-Insulator (SOI) materials were modified by Si ion implantation with different doses, as reported in this letter. The electrical performance was studied and the effect of a modification technique on the SOI materials was investigated. The characteristic, obtained by pseudo-metal-oxide-semiconductor (pseudo-MOS) method, showed that the drain ID current versus gate voltage VG(ID−VG) curves shifted along the axis of VG with the change of Si ion implantation doses. The results of electron paramagnetic resonance (EPR), x-ray photoelectron spectroscopy (XPS), and electronic test suggested that the parameters of implantation affect the electrical performance and that the metastable electron traps are introduced into the buried oxide layers of SOI materials.
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