The degradation of device under GIDL (gate-induced drain leakage current) stress has been studied using LDD NMOSFETs with 1.4 nm gate oxides. Experimental result shows that the degradation of device parameters depends more strongly on V d than on V g. The characteristics of the GIDL current are used to analyze the damage generated during the stress. It is clearly found that the change of GIDL current before and after stress can be divided into two stages. The trapping of holes in the oxide is dominant in the first stage, but that of electrons in the oxide is dominant in the second stage. It is due to the common effects of edge direct tunneling and band-to-band tunneling. SILC(stress induced leakage current)in the NMOSFET decreases with increasing stress time under GIDL stress. The degradation characteristic of SILC also shows saturating time dependence. SILC is strongly dependent on the measured gate voltage. The higher the measured gate voltage, the less serious the degradation of the gate current. A likely mechanism is presented to explain the origin of SILC during GIDL stress.
Based on P3 approximate spatially-resolved diffuse reflectance theory for semi-infinite biological tissue, the simplified expression SP3 function for highly absorbing medium close to source is studied. The research result shows that function SP3 can better describe the spatially-resolved diffuse reflectance close to source for higher absorption; the inversion of the optical parameters of highly absorbing medium with function SP3 shows the existence of extreme values of the curves fitted with diffuse reflectance data for different start distances, and the inversion results near the extreme values are the most closest to the optical parameters of real tissues.
Mono-dispersed silica spheres were prepared as template by st?ber method. Based on this template, the ordered nanoporous ceramic joints on the C/SiC composites were successfully fabricated for the first time by preceramic polymer techniques and the condition was optimized. Two different joining methods, directly soaking (DSM) and soaking after the first joining (SJM), were used for joining the ordered nanoporous ceramic joints of the C/SiC composites. The result shows that the bending strength of the joints by DSM and SJM is about 20.5 and 82.4 MPa, respectively, suggesting SJM more suitable for joining C/SiC composites
Degradation of device under substrate hot-electron (SHE) and constant voltage direct-tunnelling (CVDT) stresses are studied using NMOSFET with 1.4-nm gate oxides. The degradation of device parameters and the degradation of the stress induced leakage current (SILC) under these two stresses are reported. The emphasis of this paper is on SILC and breakdown of ultra-thin-gate-oxide under these two stresses. SILC increases with stress time and several soft breakdown events occur during direct-tunnelling (DT) stress. During SHE stress, SILC firstly decreases with stress time and suddenly jumps to a high level, and no soft breakdown event is observed. For DT injection, the positive hole trapped in the oxide and hole direct-tunnelling play important roles in the breakdown. For SHE injection, it is because injected hot electrons accelerate the formation of defects and these defects formed by hot electrons induce breakdown.
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