We address the controversy over the spin transport mechanism in Alq 3 utilizing spin pumping in the Y 3 Fe 5 O 12 /Alq 3 /Pd system. An unusual angular dependence of the inverse spin Hall effect is found. It, however, disappears when the microwave magnetic field is fully in the sample plane, excluding the presence of the Hanle effect. Together with the quantitative temperature-dependent measurements, these results provide compelling evidence that the pure spin current transport in Alq 3 is dominated by the exchange-mediated mechanism.
We clarify the physical origin of the dc voltage generation in a bilayer of a conducting polymer film and a micrometer-thick magnetic insulator Y_{3}Fe_{5}O_{12} (YIG) film under ferromagnetic resonance and/or spin wave excitation conditions. The previous attributed mechanism, the inverse spin Hall effect in the polymer [Nat. Mater. 12, 622 (2013)NMAACR1476-112210.1038/nmat3634], is excluded by two control experiments. We find an in-plane temperature gradient in YIG which has the same angular dependence with the generated voltage. Both vanish when the YIG thickness is reduced to a few nanometers. Thus, we argue that the dc voltage is governed by the Seebeck effect in the polymer, where the temperature gradient is created by the nonreciprocal magnetostatic surface spin wave propagation in YIG.
We report a strategy to coat Fe3O4 nanoparticles (NPs) with tetrathiafulvalene-fused carboxylic ligands (TTF-COO-) and to control electron conduction and magnetoresistance (MR) within the NP assemblies. The TTF-COO-Fe3O4 NPs were prepared by replacing oleylamine (OA) from OA-coated 5.7 nm Fe3O4 NPs. In the TTF-COO-Fe3O4 NPs, the ligand binding density was controlled by the ligand size, and spin polarization on the Fe3O4 NPs was greatly improved. As a result, the interparticle spacing within the TTF-COO-Fe3O4 NP assemblies are readily controlled by the geometric length of TTF-based ligand. The shorter the distance and the better the conjugation between the TTF's HOMO and LUMO, the higher the conductivity and MR of the assembly. The TTF-coating further stabilized the Fe3O4 NPs against deep oxidation and allowed I2-doping to increase electron conduction, making it possible to measure MR of the NP assembly at low temperature (<100 K). The TTF-COO-coating provides a viable way for producing stable magnetic Fe3O4 NP assemblies with controlled electron transport and MR for spintronics applications.
Inserting an antiferromagnetic layer of NiO between Pt and Y3Fe5O12 (YIG) changes the positive sign of the spin Hall magnetoresistance (SMR) in Pt/YIG to a negative sign at low temperature. Here, we use polarized neutron reflectometry to explore the coupling between NiO and YIG to understand the mechanism of the negative SMR. A weak uncompensated magnetic moment is observed in the NiO and the direction of this moment is perpendicular to YIG. Therefore, we infer that the spin axis of NiO is perpendicular to YIG. This result directly supports the explanation that the negative SMR results from the pure spin current reflected back by the NiO layer and the spin-flop coupling between NiO and YIG.
Recent demonstration of the interfacial Dzyaloshinskii-Moriya interaction (DMI) between a heavy metal and a magnetic insulator provides the possibility to manipulate chiral spin textures in the magnetic insulator for the extremely low power consumption devices. However, the origin and strength of the interfacial DMI remain in dispute in this system. We used the electrical transport measurements to determine the DMI strength to be ∼0.040 pJ/m at room temperature in Pt/Tm3Fe5O12 (TmIG) bilayers. The TmIG saturation magnetization and DMI strength exhibit different temperature dependences, which is attributed to the DMI being mainly contributed by Fe ions instead of Tm ions. With a Cu layer inserted between Pt and TmIG, the DMI strength is reduced to ∼0.012 pJ/m and the topological Hall effect vanishes, strongly suggesting that the Pt/TmIG interface has important contribution to the DMI.
We have experimentally and theoretically investigated the dc voltage generation in the heterostructure of Pt and yttrium iron garnet under the ferromagnetic resonance. Besides a symmetric Lorenz line shape dc voltage, an antisymmetric Lorenz line shape dc voltage is observed in field scan, which can solely originate from the spin rectification effect due to the spin Hall magnetoresistance. The angular dependence of the dc voltage is theoretically analyzed by taking into account both the spin pumping and the spin rectification effects. We find that the experimental results are in excellent agreement with the theoretical model, further identifying the spin Hall magnetoresistance origin of the spin rectification effect. Moreover, the spin pumping and the spin rectification effects are quantitatively separated by their different angular dependence at particular experimental geometry.
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