Although GeTe has been known as thermoelectrics since 1960s, it has attracted intensive renewed attention recently. GeTe undergoes a phase transition from a high-T cubic (c-GeTe) to a low-T rhombohedral structure (r-GeTe) through slightly distorting along the [111] direction at $720 K. Previous thermoelectric studies have mostly focused on high-symmetry c-GeTe. To date, low-symmetry r-GeTe has been revealed to show a thermoelectric figure of merit zT as high as that of c-GeTe, because the symmetry breaking electronically enables a diversified rearrangement of split bands for a high band degeneracy and thermally allows hierarchical bonds and microstructures for a low lattice thermal conductivity. This work summarizes the advancements in both r-and c-GeTe and the corresponding devicelevel progress, clearly demonstrating GeTe as one of the most efficient thermoelectrics for both mid-temperature (500-800 K) and near-room-temperature applications. In addition, topics that might be of interest and lead to further advancements are outlined.

GeTe experiences phase transition between cubic and rhombohedral through distortion along the [111] direction. Cubic GeTe shares the similarity of a two-valence-band structure (high-energy L and low-energy Σ bands) with other cubic IV–VI semiconductors such as PbTe, SnTe, and PbSe, and all show a high thermoelectric performance due to a high band degeneracy. Very recently, the two valence bands were found to switch in energy in rhombohedral GeTe and to be split due to symmetry-breaking of the crystal structure. This enables the overall band degeneracy to be manipulated either by the control of symmetry-induced degeneracy or by the design of energy-aligned orbital degeneracy. Here, we show Sb-doping for optimizing carrier concentration and manipulating the degree of rhombohedral lattice distortion to maximize the band degeneracy and then electronic performance. In addition, Sb-doping significantly promotes the solubility of PbTe, enhancing the scattering of phonons by Ge/Pb substitutional defects for minimizing the lattice thermal conductivity. This successfully realizes a superior thermoelectric figure of merit, zT of >2 in both rhombohedral and cubic GeTe, demonstrating these alloys as top candidates for thermoelectric applications at T < 800 K. This work further sheds light on the importance of crystal structure symmetry manipulation for advancing thermoelectrics.

No abstract

Low-grade heat accounts for >50% of the total dissipated heat sources in industries. An efficient recovery of low-grade heat into useful electricity not only reduces the consumption of fossil-fuels but also releases the subsequential environmental-crisis. Thermoelectricity offers an ideal solution, yet low-temperature efficient materials have continuously been limited to Bi2Te3-alloys since the discovery in 1950s. Scarcity of tellurium and the strong property anisotropy cause high-cost in both raw-materials and synthesis/processing. Here we demonstrate cheap polycrystalline antimonides for even more efficient thermoelectric waste-heat recovery within 600 K than conventional tellurides. This is enabled by a design of Ni/Fe/Mg3SbBi and Ni/Sb/CdSb contacts for both a prevention of chemical diffusion and a low interfacial resistivity, realizing a record and stable module efficiency at a temperature difference of 270 K. In addition, the raw-material cost  to the output power ratio in this work is reduced to be only 1/15 of that of conventional Bi2Te3-modules.

GeTe alloys have recently attracted wide attention as efficient thermoelectrics. In this work, a single-leg thermoelectric device with a conversion efficiency as high as 14% under a temperature gradient of 440 K was fabricated on the basis of GeTe-Cu2Te-PbSe alloys, which show a peak thermoelectric figure of merit (zT) > 2.5 and an average zT of 1.8 within working temperatures. The high performance of the material is electronically attributed to the carrier concentration optimization and thermally due to the strengthened phonon scattering, the effects of which all originate from the defects in the alloys. A design of Ag/SnTe/GeTe contact successfully enables both a prevention of chemical diffusion and an interfacial contact resistivity of 8 microhm·cm2 for the realization of highly efficient devices with a good service stability/durability. Not only the material’s high performance but also the device’s high efficiency demonstrated the extraordinariness of GeTe alloys for efficient thermoelectric waste-heat recovery.

Thermoelectric technology offers unique advantages of all solid-state, silent and emission-free for waste-heat recovery applications. Yet existing thermoelectric modules, in particular for recovering low-grade but abundant heat of <600 K,...

Band convergence has been proven as an effective approach for enhancing thermoelectric performance, particularly in p-type IV–VI semiconductors, where the superior electronic performance originates from the contributions of both L and Σ band valleys when they converge to have a small energy offset. When alloying with cubic IV–VI semiconductors, CdTe has been found as an effective agent for achieving such a band convergence. This work focuses on the effect of CdTe-alloying on the thermoelectric transport properties of GeTe, where the carrier concentration can be tuned in a broad range through Bi-doping on Ge site. It is found that CdTe-alloying indeed helps to converge the valence bands of GeTe in both low-T rhombohedral and high-T cubic phases for an increase in Seebeck coefficient with a decrease in mobility. In addition, the strong phonon scattering due to the existence of high-concentration Cd/Ge and Bi/Ge substitutions leads the lattice thermal conductivity to be reduced to as low as 0.6 W/(m-K). These lead to an effectively increased average thermoelectric figure of merit (ZT ave ∼ 1.2) at 300–800 K, which is higher than that of many IV–VI materials with CdTe-alloying or alternatively with MnTe-, MgTe-, SrTe-, EuTe-, or YbTe-alloying for a similar band convergence effect.

Development of thermoelectrics usually involves trial-and-error investigations, including time-consuming synthesis and measurements. Here, we identify the electronic quality factor BE for determining the maximum thermoelectric power factor, which can be conveniently estimated by a single measurement of Seebeck coefficient and electrical conductivity of only one sample, not necessarily optimized, at an arbitrary temperature. We demonstrate that thousands of experimental measurements in dozens of materials can all be described by a universal curve and a single material parameter BE for each class of materials. Furthermore, any deviation in BE with temperature or doping indicated new effects such as band convergence or additional scattering. This makes BE a powerful tool for evaluating and guiding the development of thermoelectrics. We demonstrate the power of BE to show both p-type GeTe alloys and n-type Mg3SbBi alloys as highly competitive materials, at near room temperature, to state-of-the-art Bi2Te3 alloys used in nearly all commercial applications.