Friction and wear are two main causes of mechanical energy dissipation and component failure, especially in micro/nanomechanical systems with large surface-to-volume ratios. In the past decade there has been an increasing level of research interest regarding superlubricity, a phenomenon, also called structural superlubricity, in which friction almost vanishes between two incommensurate solid surfaces. However, all experimental structural superlubricity has been obtained on the microscale or nanoscale, and predominantly under high vacuum. Here, we show that superlubricity can be realized in centimetres-long double-walled carbon nanotubes (DWCNTs) under ambient conditions. Centimetres-long inner shells can be pulled out continuously from such nanotubes, with an intershell friction lower than 1 nN that is independent of nanotube length. The shear strength of the DWCNTs is only several pascals, four orders of magnitude lower than the lowest reported value in CNTs and graphite. The perfect structure of the ultralong DWCNTs used in our experiments is essential for macroscale superlubricity.

GDNWs (graphdiyne nanowires) have successfully been constructed which exhibit a very high quality defect-free surface using the VLS growth process. Measurement of electrical properties showed that the GDNWs produced are excellent semiconductors with a conductivity of 1.9 × 10(3) S m(-1) and a mobility of 7.1 × 10(2) cm(2) V(-1) s(-1) at room temperature. The results have confirmed that GDNW is indeed a promising and key novel material in electronic and photoelectric fields for both fundamental and potentially practical applications.

We propose that a photodetector based on nanotubes formed from layered structure may have a faster response than nanowires or nanobelts. The layered compound tungsten disulfide (WS2) can absorb visible and near-infrared lights. We fabricated photodetectors based on individual WS2 nanotubes. The photodetectors exhibited a remarkable response to excitation with 633 and 785 nm light. The nanotube-based photodetectors exhibited short rise and decay times of a few hundred μs, high on/off ratio, and high spectral responsivity and external quantum efficiency. Our results imply that WS2 nanotubes are prospective candidates for high-performance nanoscale optoelectronic devices.

We report a systematic study on the correlation of the electrical transport properties with the crystal phase and orientation of single-crystal InAs nanowires (NWs) grown by molecular-beam epitaxy. A new method is developed to allow the same InAs NW to be used for both the electrical measurements and transmission electron microscopy characterization. We find both the crystal phase, wurtzite (WZ) or zinc-blende (ZB), and the orientation of the InAs NWs remarkably affect the electronic properties of the field-effect transistors based on these NWs, such as the threshold voltage (VT), ON-OFF ratio, subthreshold swing (SS) and effective barrier height at the off-state (ΦOFF). The SS increases while VT, ON-OFF ratio, and ΦOFF decrease one by one in the sequence of WZ ⟨0001⟩, ZB ⟨131⟩, ZB ⟨332⟩, ZB ⟨121⟩, and ZB ⟨011⟩. The WZ InAs NWs have obvious smaller field-effect mobility, conductivities, and electron concentration at VBG = 0 V than the ZB InAs NWs, while these parameters are not sensitive to the orientation of the ZB InAs NWs. We also find the diameter ranging from 12 to 33 nm shows much less effect than the crystal phase and orientation on the electrical transport properties of the InAs NWs. The good ohmic contact between InAs NWs and metal remains regardless of the variation of the crystal phase and orientation through temperature-dependent measurements. Our work deepens the understanding of the structure-dependent electrical transport properties of InAs NWs and provides a potential way to tailor the device properties by controlling the crystal phase and orientation of the NWs.

We report a new design of carbon nanotube (CNT) resonator, whose resonance frequency can be tuned not only transversally by a gate voltage, but also by the axial strain applied through directly pulling the CNT. The resonators are fabricated from individual suspended single-walled CNT (SWCNT) in situ inside a scanning electron microscope. The resonance frequency of a SWCNT resonator can be tuned by more than 20 times with an increase of quality factor when the axial strain of the SWCNT is only increased from nearly zero to 2% at room temperature. The transversal gate-tuning ability is found to be weaker than the axial-tuning ability and decrease with increasing the axial strain. The gate voltage can hardly tune the resonance frequency when the initial axial strain is larger than 0.35% and the CNT acts like a tied string. The relationship among resonance frequency, gate voltage, and initial axial strain of the CNT obtained presently will allow for the designs of CNT resonators with high frequency and large tuning range. The present resonator also shows ultrahigh sensitivity in displacement and force detection, with a resolution being better than 2.4 pm and 0.55 pN, respectively.