Long, straight gallium nitride nanowires, such as those shown in the Figure, are reported to have been grown directly on substrates, without templates, from the reaction of ammonium with metal gallium. Nanoparticle catalysts and directed flow of the carrier gas are shown to be the main factors leading to the quasi‐1D growth. GaN nanowires can be used to improve the performance of certain optoelectronic devices.

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The Al 2 O 3 -SrO binary system has been studied using the CALPHAD technique in this paper. The modeling of Al 2 O 3 in the liquid phase is modified from the traditional formula with the liquid phase represented by the ionic two-sublattice model as (Al 3+ , Sr 2+ ) P ( AlO 1À 2 , O 2-) Q . Based on the measured phase equilibrium data and experimental thermodynamic properties, a set of thermodynamic functions has been optimized using an interactive computer-assisted analysis. The calculated results are compared with experimental data. A comparison between this system and similar systems is also given.

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Phase diagram and thermodynamic properties of the Ni-Ga system are assessed based on the CALPHAD approach, using all available experimental data and applying appropriate thermodynamic models. The liquid phase and the Ni-based solid solution (Ni) are treated as disordered solutions. The thermodynamic behavior of the ordered intermetallic compounds with appreciable ranges of homogeneity, Ni 3 Ga and NiGa, are described by a two-sublattice model, and the order-disorder transformation between Ni 3 Ga and fcc-(Ni) is also explicitly considered in this work. The other five intermetallic compounds are treated as stoichiometric line compounds. The phase diagram and the thermodynamic properties calculated from the optimized model parameters are in good agreement with most of the experimental data.