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Low-loss tungsten—bronze microwave dielectric ceramics are dielectric materials with potential application value for miniaturized dielectric filters and antennas in the fifth-generation (5G) communication technology. In this work, a novel Al/Nd co-doping method of Ba4Nd9.33Ti18O54 (BNT) ceramics with a chemical formula of Ba4Nd9.33+z/3Ti18−zAlzO54 (BNT—AN, 0 ≼ z ≼ 2) was proposed to improve the dielectric properties through structural and defect modulation. Together with Al-doped ceramics (Ba4Nd9.33Ti18−zAl4z/3O54, BNT—A, 0 ≼ z ≼ 2) for comparison, the ceramics were prepared by a solid state method. It is found that Al/Nd co-doping method has a significant effect on improving the dielectric properties compared with Al doping. As the doping amount z increased, the relative dielectric constant (εr) and the temperature coefficient of resonant frequency (τf) of the ceramics decreased, and the Q×f values of the ceramics obviously increased when z ≼ 1.5. Excellent microwave dielectric properties of εr = 72.2, Q×f = 16,480 GHz, and τf = +14.3 ppm/°C were achieved in BNT—AN ceramics with z = 1.25. Raman spectroscopy and thermally stimulated depolarization current (TSDC) technique were firstly combined to analyze the structures and defects in microwave dielectric ceramics. It is shown that the improvement on Q×f values was originated from the decrease in the strength of the A-site cation vibration and the concentration of oxygen vacancies $$\text{V}_\text{O}^{^{ \cdot \cdot }}$$, demonstrating the effect and mechanism underlying for structural and defect modulation on the performance improvement of microwave dielectric ceramics.

Owing to the phenomenal growth of the communication industry in recent years, higher frequencies and broader bandwidths are required to transmit large amounts of data. As a result, the millimeter-wave and terahertz technologies have gained wide attention. Based on extensive research, microwave dielectric ceramics exhibiting a high relative dielectric constant ( r ), low dielectric loss (tanδ) or high Q × f value (Q = 1/tanδ, f = resonant frequency), and near-zero temperature coefficient of resonant frequency ( f ) are considered the most suitable materials for fabricating devices such as resonators, filters, and antennas for application in the field of microwave communication. 1,2 However, limited information is available on the dielectric properties of ceramic materials in millimeter-wave and submillimeter-wave (low terahertz) frequency ranges. 3 As the response mechanism of ceramic materials to microwave and terahertz electromagnetic fields is supposed to

No abstract

Low-loss tungsten-bronze microwave dielectric ceramics are a kind of dielectric materials with potential application value for miniaturized dielectric filters and antennas in 5G communication technology. In this work, a novel Al/Nd co-doping method of Ba4Nd9.33Ti18O54 (BNT) ceramics with a chamical formula of Ba4Nd9.33+z/3Ti18-zAlzO54 (BNT-AN, 0 ≤ z ≤ 2) was proposed to improve the dielectric properties through structural and defect modulation. Together with Al-doped ceramics (Ba4Nd9.33Ti18-zAl4z/3O54, BNT-A, 0 ≤ z ≤ 2) for comparison, the ceramics were prepared by solid state method. It is found that Al/Nd co-doping method has a significant effect on improving the dielectric properties compared with Al doping. As the doping amount z increased, the relative dielectric constant (εr) and the temperature coefficient of resonant frequency (τf) of the ceramics decreased, and the Q×f values of the ceramics obviously increased when z ≤ 1.5. Excellent microwave dielectric properties of εr = 72.2, Q×f = 16480 GHz, and τf = +14.3 ppm/℃ were achieved in BNT-AN ceramics with z = 1.25. Raman spectroscopy and thermally stimulated depolarization current (TSDC) technique were firstly combined to analyze the structure and defects in the dielectric ceramics. It is shown that the improvement on Q×f values were origined from the decrease in the strength of the A-site cation vibration and the concentration of oxygen vacancies (Vö), demonstrating the effect and mechanism underlying for structural and defect modulation on the performance improvement of microwave dielectric ceramics.