The coupling between electrons and phonons is ubiquitous in condensed matter physics. In recent years, with the rise of two dimensional (2D) materials, electron–phonon interaction exhibits unique characteristics compared with their three‐dimensional counterparts. In this paper, research progress of electron–phonon interaction in 2D materials is briefly reviewed, mainly focus on thermoelectric device, conventional superconductor, field effect transistor, and photoelectric device. Firstly, electron–phonon interaction on thermoelectric application of 2D materials is concluded according to recent reports, and strategies to increase figure of merit are discussed. Next, strong electron–phonon coupling strength is essential for increasing transition temperature of superconductors. Conversely, electron–phonon interaction inhibits the carrier mobility for transport process. By summarizing research works in the past years, its role on the performance of 2D materials‐based field effect transistors is fully evaluated. Furthermore, the influences of electron–phonon interaction on light–matter interaction in 2D materials are briefly overviewed. Finally, some outlooks in the field are prospected. In a word, understanding electron–phonon interaction in 2D materials establishes strategically important directions for manipulating physical properties and optimizing device design.

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In recent years, van der Waals heterostructures (vdWHs) of two-dimensional (2D) materials have attracted extensive research interest. By stacking various 2D materials together to form vdWHs, it is interesting to see that new and fascinating properties are formed beyond single 2D materials; thus, 2D heterostructures-based nanodevices, especially for potential optoelectronic applications, were successfully constructed in the past few decades. With the dramatically increased demand for well-controlled heterostructures for nanodevices with desired performance in recent years, various interfacial modulation methods have been carried out to regulate the interfacial coupling of such heterostructures. Here, the research progress in the study of interfacial coupling of vdWHs (investigated by Photoluminescence, Raman, and Pump–probe spectroscopies as well as other techniques), the modulation of interfacial coupling by applying various external fields (including electrical, optical, mechanical fields), as well as the related applications for future electrics and optoelectronics, have been briefly reviewed. By summarizing the recent progress, discussing the recent advances, and looking forward to future trends and existing challenges, this review is aimed at providing an overall picture of the importance of interfacial modulation in vdWHs for possible strategies to optimize the device’s performance.