The direct formation of graphene on various dielectric surfaces is successful via a single-step rapid thermal processing (RTP) of substrates coated with amorphous carbon (C) and nickel (Ni) thin films. High-quality graphene is obtained uniformly on the whole surface of wafers with a controlled number of graphene layers. The monolayer graphene exhibits a low sheet resistance and a high optical transmittance in the visible range.
Fast growth of diamond crystals in open air was achieved by combustion synthesis with resonant laser energy coupling. A premixed C 2 H 4 /C 2 H 2 /O 2 gas mixture was used as precursors for growth of diamond crystals. Through the resonant excitation of the CH 2 wagging mode of the ethylene (C 2 H 4 ) molecules using a CO 2 laser tuned at 10.532 μm, high-quality diamond crystals were grown on silicon substrates with a high growth rate at ∼139 μm/h. Diamond crystals with a length up to 5 mm and a diameter of 1 mm were grown in 36 h. Sharp Raman peaks at 1332 cm -1 with full width at half-maximum (fwhm) values around 4.5 cm -1 and distinct X-ray diffraction spectra demonstrated the high quality of the diamond crystals. The effects of the resonant laser energy coupling were investigated using optical emission spectroscopy.
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