We report the observation of two signatures of a pressure-induced topological quantum phase transition in the polar semiconductor BiTeI using x-ray powder diffraction and infrared spectroscopy. The x-ray data confirm that BiTeI remains in its ambient-pressure structure up to 8 GPa. The lattice parameter ratio c/a shows a minimum between 2.0-2.9 GPa, indicating an enhanced c-axis bonding through p(z) band crossing as expected during the transition. Over the same pressure range, the infrared spectra reveal a maximum in the optical spectral weight of the charge carriers, reflecting the closing and reopening of the semiconducting band gap. Both of these features are characteristics of a topological quantum phase transition and are consistent with a recent theoretical proposal.

The phase transition, amorphization, and crystallization behaviors of the topological insulator bismuth selenide (Bi2Se3) were discovered by performing in situ high-pressure angle-dispersive x-ray diffraction experiments during an increasing, decreasing, and recycling pressure process. In the compression process, Bi2Se3 transforms from the original rhombohedral structure (phase I(A)) to a monoclinic structure (phase II) at about 10.4 GPa, and further to a body-centered tetragonal structure (phase III) at about 24.5 GPa. When releasing pressure to ambient conditions after the complete transformation from phase II to III, Bi2Se3 becomes an amorphous solid (AM). In the relaxation process from this amorphous state, Bi2Se3 starts crystallizing into an orthorhombic structure (phase I(B)) about five hours after releasing the pressure to ambient. A review of the pressure-induced phase transition behaviors of A2B3-type materials composed from the V and VI group elements is presented.

A new type of disordered substitution alloy of Sb and Te at above 15.1 GPa was discovered by performing in situ high-pressure angle-dispersive X-ray diffraction experiments on antimony telluride (Sb(2)Te(3)), a topological insulator and thermoelectric material, at room temperature. In this disordered substitution alloy, Sb(2)Te(3) crystallizes into a monoclinic structure with the space group C2/m, which is different from the corresponding high-pressure phase of the similar isostructural compound Bi(2)Te(3). Above 19.8 GPa, Sb(2)Te(3) adopts a body-centered-cubic structure with the disordered atomic array in the crystal lattice. The in situ high-pressure experiments down to about 13 K show that Sb(2)Te(3) undergoes the same phase-transition sequence with increasing pressure at low temperature, with almost the same phase-transition pressures.

3-MA, 3-methyladenine; ANXA5, annexin A5; ATG, autophagy related; CA-5f, (3E,5E)-3-(3,4-dimethoxybenzylidene)-5-[(1H-indol-3-yl)methylene]-1-methylpiperidin-4-one; CQ, chloroquine; CTSB, cathepsin B; CTSD, cathepsin D; DMSO, dimethyl sulfoxide; DNM2, dynamin 2; EBSS, Earle's balanced salt solution; GFP, green fluorescent protein; HCQ, hydroxyl CQ; HEK293, human embryonic kidney 293; HUVEC, human umbilical vein endothelial cells; LAMP1, lysosomal associated membrane protein 1; LC-MS/MS, liquid chromatography coupled to tandem mass spectrometry; LDH, lactic acid dehydrogenase; LMO7, LIM domain 7; MAP1LC3B/LC3B, microtubule associated protein 1 light chain 3 beta; NAC, N-acetyl cysteine; MYO1E, myosin IE; NSCLC, non-small cell lung cancer; PARP1, poly(ADP-ribose) polymerase 1; PI, propidium iodide; RFP, red fluorescent protein; ROS, reactive oxygen species; SQSTM1, sequestosome 1; TUNEL, terminal deoxynucleotidyl transferase-mediated dUTP nick-end labeling.

We have used X-ray absorption near-edge fine-structure ͑XANES͒ analysis of oxygen K-edges in combination with highresolution transmission electron microscopy to investigate phase separation in Hf-silicate thin films subjected to high temperature anneals. We show that the oxygen K-edge fine structures can, in a first approximation, be interpreted as an overlap of features from amorphous silica and crystalline hafnia phases in the phase separated microstructures. Increasing amounts of silica in the samples resulted in an increase of bulk silica-like features in the oxygen K-edges. The lowest conduction band levels are determined by the Hf d states of hafnia for all compositions investigated. XANES was not able to detect silicate-type bonding that is expected to be present in some of the films.

In-situ high-pressure X-ray diffraction and Raman spectroscopies have been performed on well-shaped CeO2 nano-octahedrons enclosed by eight (111) planes. The CeO2 nano-octahedrons are shown to be more stable than their bulk counterparts and some other reported CeO2 nanocrystals of smaller size. The transition pressure from cubic to orthorhombic phase is approximately 10 GPa higher than that of 12 nm CeO2 nanocrystals even though they have similar volume expansion at ambient conditions. Additionally, the phase transition to α-PbCl2 phase is very sluggish and uncompleted even up to 55 GPa. The TEM image of the sample after decompression from 55 GPa clearly shows that the nano-octahedrons preserve the starting shape. Such distinct high-pressure behaviors in CeO2 nano-octahedrons have been discussed in terms of their special exposure surface. Further analysis shows that the lower compressibility of the exposed (111) planes in the nano-octahedrons is believed to be the major factor to the elevation of the phase transition pressure and the sluggishness of the transition.

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