Strain-adjusting the band gap of MoS 2 using patterned substrates to improve the photoelectric performance of MoS 2 has gradually become a research hotspot in recent years. However, there are still difficulties in obtaining high-quality two-dimensional materials and preparing photodetectors on patterned substrates. To overcome this, a continuous multilayer MoS 2 film was transferred to a patterned gallium nitride substrate (PGS) for the fabrication of photodetectors, and density functional theory calculations showed that the band gap of the MoS 2 film increased and that the electron effective mass decreased due to the introduction of PGS. In addition, finite difference time domain simulation showed that the electric field in the MoS 2 area on the PGS is enhanced compared with that on the flat gallium nitride substrate due to the enhanced light scattering effect of the PGS. The photoresponse of the MoS 2 /PGS photodetector at 460 nm was also enhanced, with I ph increasing by 5 times, R increasing by 2 times, NEP decreasing to 3.88 × 10 −13 W/Hz 1/2 , and D* increasing to 5.6 × 10 8 Jones. Our research has important guiding significance in adjusting the band gap of MoS 2 and enhancing the photoelectric performance of MoS 2 photodetectors.

Two-dimensional material MoS 2 has excellent optical and electrical characteristics and a controllable energy band structure, leading to a high potential value for designing photodetectors. In this work, a kind of van der Waals heterostructure composed of AlN and a MoS 2 photodetector was fabricated. The optical properties of MoS 2 can be improved by the polarization effect of AlN. On this basis, with a 3 nm thick Al 2 O 3 layer deposited on the MoS 2 layer, the strain effects were also investigated to improve the performance of the detector. The result showed that under an illumination of 365 nm wavelength, the stress liner device showed excellent performance relative to the control device and the photocurrent and responsivity were improved by more than five times. Our work provides guidance for developing heterostructure photoelectric devices and also proves the role of strain engineering in improving the performance of photodetectors.

The layered semiconductor material molybdenum disulfide (MoS2) has led to an upsurge in research for applications in optoelectric devices that benefit from its excellent optical and electrical properties. The application of the plasmonic structure to enhance light–matter interaction and intensity of the light field via localized surface plasmon resonance provides a promising method for MoS2-based devices for improving performance. In this work, we have prepared a plasmon-enhanced few-layer MoS2 photodetector based on a gallium nitride substrate using a bowtie equal grid antenna structure, and the large-scale few-layer MoS2 growth on the GaN substrate is realized by chemical vapor deposition. The enhancement MoS2 plasmonic photodetector achieves a high responsivity R of 0.82 A/W, a low noise equivalent power NEP of 6.58 × 10–14 W/Hz1/2, and a detectivity of 1.56 × 1012 Jones under 365 nm at 5 V bias and a corresponding rise/fall time of 18/10 ms. With the enhanced performance of the photodetector demonstrated, the as-fabricated plasmonic structure proposed a feasibility method to achieve enhanced photoresponse and is applicable to other high-efficiency photoelectric devices.