Transparent electrodes with a dielectric-metal-dielectric (DMD) structure can be implemented in a simple manufacturing process and have good optical and electrical properties. In this study, nickel oxide (NiO) is introduced into the DMD structure as a more appropriate dielectric material that has a high conduction band for electron blocking and a low valence band for efficient hole transport. The indium-free NiO/Ag/NiO (NAN) transparent electrode exhibits an adjustable high transmittance of ∼82% combined with a low sheet resistance of ∼7.6 Ω·s·q(-1) and a work function of 5.3 eV after UVO treatment. The NAN electrode shows excellent surface morphology and good thermal, humidity, and environmental stabilities. Only a small change in sheet resistance can be found after NAN electrode is preserved in air for 1 year. The power conversion efficiencies of organic photovoltaic cells with NAN electrodes deposited on glass and polyethylene terephthalate (PET) substrates are 6.07 and 5.55%, respectively, which are competitive with those of indium tin oxide (ITO)-based devices. Good photoelectric properties, the low-cost material, and the room-temperature deposition process imply that NAN electrode is a striking candidate for low-cost and flexible transparent electrode for efficient flexible optoelectronic devices.
A low-work-function, indium tin oxide (ITO)-free transparent cathode having a tin oxide (SnOX)/Ag/SnOX/bismuth oxide (Bi2O3) (SASB) structure is developed without using annealing treatment. This represents the first time that Bi2O3 has been introduced to lower the work function of transparent electrodes. The SASB transparent cathode exhibits excellent photoelectric properties with a maximum transmittance of ∼88%, a low sheet resistance of ∼9.0 Ω·sq(-1), and a suitable work function of 4.22 eV that matches the lowest unoccupied molecular orbital level of the acceptor for exacting electrons efficiently. The power conversion efficiency of the polymer solar cell with the SASB electrode is 6.21%, which is comparable to that of ITO-based devices. The results indicate that SASB is a good alternative to ITO as transparent cathodes in optoelectronic devices.
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