BZNT (Bi1.5Zn0.5Nb0.5Ti1.5O7) thin films were prepared on Pt/Ti/SiO2/Si substrates by radio frequency (RF) magnetron sputtering in different O2/Ar ranging from 4:16 to 7:13. The structure and surface morphology of BZNT thin films were investigated by x-ray diffraction (XRD) and atom force microscopy (AFM). The analysis of component in BZNT films were carried out by x-ray photoelectron spectroscopy (XPS). The dielectric measurements were conducted on metal-insulator-metal capacitors at the frequency from 100 Hz to 1M Hz. It’s found that the O2/Ar ratios significantly influence the elements content in BZNT thin films and the morphology and dielectric properties of BZNT thin films. At 1M Hz, the dielectric constant of BZNT thin films deposited at O2/Ar ranging from 4:16 to 7:13 is 212, 187, 171, 196, respectively. The BZNT thin film prepared at O2/Ar = 6:14 shows the highest figure of merit for its very low dielectric loss of 0.0024.
Bismuth zinc niobate titanium (Bi1.5Zn0.5 Nb0.5Ti1.5O7) (BZNT) thin films were deposited on PtTiSiO2Si substrates by radio frequency (rf) magnetron sputtering. The microstructure, surface morphology, stress, dielectric and tunable properties of thin films were investigated as a function of initial annealing temperature. It’s found that high initial annealing temperature increases the grain size, dielectric constant and tunability of BZNT films simultaneously and decreases the tensile stress in films. The BZNT thin film annealed from 500 °C to 700 °C shows the highest FOM value of 45.67 with the smallest dielectric loss and upper tunability.
The Pb0.25Ba0.15Sr0.6TiO3 (PBST) thin films have been deposited on Pt/Ti/SiO2/Si substrates at different temperatures by radio frequency (rf) magnetron sputtering method. The microstructure, surface morphology, dielectric and tunable properties of PBST thin films were investigated as a function of deposition temperature. It’s found that the orientation of PBST thin films was adjusted by deposition temperature. The PBST thin film deposited at room temperature shows (100) preferred orientation and its dielectric constant and tunability are higher than that of PBST thin film deposited at 450 °C. Furthermore, the PBST thin film deposited at room temperature shows lower dielectric loss and leakage current, which makes it exhibit higher FOM of 49.47 for its appropriate tunability of 44.38% and low dielectric loss of 0.00897.
Pb0.3Sr0.7TiO3 (PST) and 4.5 mol% Mn doped Pb0.3Sr0.7TiO3 (PSTMn) thin films as well as PST/PSTMn/PST/PSTMn/PST (ML-a) and PSTMn/PST/PSTMn/PST/PSTMn (ML-b) multilayered thin films have been fabricated on Pt/Ti/SiO2/Si substrate with sol–gel method. The structure and surface morphology of PST, PSTMn, ML-a and ML-b thin films were investigated by x-ray diffraction (XRD) and atom force microscopy (AFM). The dielectric measurements were conducted on metal-insulator-metal capacitors at the frequency from 100 Hz to 1M Hz and at room temperature. It was found that the surface microstructure of multilayered thin films is influenced by deposition sequence and the dielectric constant and tunability of two multilayered thin films lie between that of PST and PSTMn thin films. However, two multilayered thin films have higher the figure of merit (FOM) for lower dielectric loss. The FOM of PST and PSTMn single-component films as well as ML-a and Ml-b multilayered films are 14.2, 14.6, 16.3 and 20.2, respectively. Our results showed that multilayer structure can improve the comprehensive dielectric tunable performance of PST film.
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