Integral imaging is a promising three-dimensional (3D) imaging technique that captures and reconstructs light field information. Microlens arrays are usually used for the reconstruction process to display 3D scenes to the viewer. However, the inherent chromatic aberration of the microlens array reduces the viewing quality, and thus, broadband achromatic imaging remains a challenge for integral imaging. Here, we realize a silicon nitride metalens array in the visible region that can be used to reconstruct 3D optical scenes in the achromatic integral imaging for white light. The metalens array contains 60 × 60 polarization-insensitive metalenses with nearly diffraction-limited focusing. The nanoposts in each high-efficiency (measured as 47% on average) metalens are delicately designed with zero effective material dispersion and an effective achromatic refractive index distribution from 430 to 780 nm. In addition, such an achromatic metalens array is composed of only a single silicon nitride layer with an ultrathin thickness of 400 nm, making the array suitable for on-chip hybrid-CMOS integration and the parallel manipulation of optoelectronic information. We expect these findings to provide possibilities for full-color and aberration-free integral imaging, and we envision that the proposed approach may be potentially applicable in the fields of high-power microlithography, high-precision wavefront sensors, virtual/augmented reality and 3D imaging.
Vector beams with phase modulation in a high numerical aperture system are able to break through the diffraction limit. However, the implementation of such a device requires a combination of several discrete bulky optical elements, increasing its complexity and possibility of the optical loss. Dielectric metalens, an ultrathin and planar nanostructure, has a potential to replace bulky optical elements, but its optimization with full-wave simulations is time-consuming. In this paper, an accurate and efficient theoretical model of planar metalens is developed. Based on this model, a twofold optimization scheme is proposed for optimizing the phase profile of metalenses so as to achieve subdiffraction focusing with high focusing efficiency. Then, a metalens that enables to simultaneously generate radially polarized beam (RPB) and modulate its phase under the incidence of x-polarized light with the wavelength of 532 nm is designed. Full-wave simulations show that the designed metalens of NA = 0.95 can achieve subdiffraction focusing (FWHM = 0.429λ) with high transmission efficiency (77.6%) and focusing efficiency (17.2%). Additionally, superoscillation phenomenon is found, leading to a compromise between the subdiffraction spot and high efficiency. The proposed method may provide an accurate and efficient way to achieve sub-wavelength imaging with the expected performances, which shows a potential application in super-resolution imaging.
As one of nanoscale planar structures, metasurface has shown excellent superiorities on manipulating light intensity, phase and/or polarization with specially designed nanoposts pattern. It allows to miniature a bulky optical lens into the chip-size metalens with wavelength-order thickness, playing an unprecedented role in visible imaging systems (e.g. ultrawide-angle lens and telephoto). However, a CMOS-compatible metalens has yet to be achieved in the visible region due to the limitation on material properties such as transmission and compatibility. Here, we experimentally demonstrate a divergent metalens based on silicon nitride platform with large numerical aperture (NA~0.98) and high transmission (~0.8) for unpolarized visible light, fabricated by a 695-nm-thick hexagonal silicon nitride array with a minimum space of 42 nm between adjacent nanoposts. Nearly diffraction-limit virtual focus spots are achieved within the visible region. Such metalens enables to shrink objects into a micro-scale size field of view as small as a single-mode fiber core. Furthermore, a macroscopic metalens with 1-cm-diameter is also realized including over half billion nanoposts, showing a potential application of wide viewing-angle functionality.Thanks to the high-transmission and CMOS-compatibility of silicon nitride, our findings may open a new door for the miniaturization of optical lenses in the fields of optical fibers, microendoscopes, smart phones, aerial cameras, beam shaping, and other integrated on-chip devices.Over the last few years, metasurfaces have emerged a great potential to replace bulky optical components due to their ultrathin and planar features 1-6 . By arranging the array of nanoposts properly, metasurfaces can almost realize arbitrary modulation on amplitude, phase and/or polarization pixel-by-pixel in subwavelength scale, leading to plenty planar device applications including beam bending generations 7-9 , holograms 10-16 , wave plates 17-20 , vortex beam generations 7,21-23 , Bessel beam generations 24,25 and vector beam generations 26 , etc. In particular, it is capable to design metasurfaces as arbitrary metalenses 24, . There are much great efforts on this fantastic high-integrated metalenses, most of which were designed at the microwave 27,28 and near infrared 24,29-37 regions. For example, a metalens with high transmission and focusing efficiency at some particular near-infrared wavelengths has been reported on Ref. 30, due to the great contributions on high-contrast dielectric nanoposts and high-precision nano-fabrication technology, instead of the early use of lossy metallic materials 24,[38][39][40][41][42] . Very recently, it moves a crucial step that the metalenses have been designed and fabricated on low-contrast dielectric materials 22,43-47 such that their transparent window falls within visible region, inspiring many unprecedented applications with high energy availability. Among low-contrast dielectric materials, silicon nitride (SiN) films have been recognized as a fully CMOS-compatible pl...
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