In this study, we
introduced an ordered metal–semiconductor–molecular
system and investigated the surface-enhanced Raman scattering (SERS)
effect. The carrier distribution and density can be easily monitored
by changing the thickness of the Cu2S film on the surface
of the Ag monolayer under different laser excitations. Meanwhile,
different laser wavelengths were selected for investigating the enhancement
mechanism of the system based on the viewpoint of the number of carriers
and changes in the excitation energy. During this process, we found
that the SERS peaks located at 1586 cm–1 changed
significantly because the intensity can be “borrowed”
from exited transition and the molecule-to-semiconductor transition.
In combination with the theories of Albrecht and Lombardi, this phenomenon
was analyzed in detail, and the experimental results and theoretical
research match well. This research regarding the semiconductor-based
SERS substrates will expand the basic theory of SERS enhancement and
provide a theoretical basis for optical and biological applications.
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