Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular magnetic anisotropy that are demanded by the high-density magnetic storage and memory devices. Here, we demonstrate that this limitation can be overcome by exploiting a magnetic spin Hall effect in noncollinear antiferromagnets, such as Mn3Sn. The magnetic group symmetry of Mn3Sn allows generation of the out-of-plane spin current carrying spin polarization collinear to its direction induced by an in-plane charge current. This spin current drives an out-of-plane anti-damping torque providing the deterministic switching of the perpendicular magnetization of an adjacent Ni/Co multilayer. Due to being odd with respect to time reversal symmetry, the observed magnetic spin Hall effect and the resulting spin-orbit torque can be reversed with reversal of the antiferromagnetic order. Contrary to the conventional spin-orbit torque devices, the demonstrated magnetization switching does not need an external magnetic field and requires much lower current density which is useful for low-power spintronics.
A True Random Number Generator is an essential component in data encryption, hardware security, physical unclonable functions, and statistical analyses. Conventional CMOS devices usually exploit the thermal noise or jitter to generate randomness, which suffers from high energy consumption, slow bit generating rate, large area, and over-complicated circuit. In this mini review, we introduce the novel physical randomness generating mechanism based on the stochastic switching behavior of magnetic tunnel junctions. As compared to CMOS technologies, the random number generator based on spintronic devices can have many inherent advantages, such as simpler structure, compact area, higher throughput, and better energy-efficiency. Here, we review and compare various existing schemes at the device and circuit levels to achieve high performance magnetic tunnel junctions based on a True Random Number Generator. Future research trends and challenges are also discussed to stimulate more works in this area.
In this paper, we demonstrate that V0.027Bi0.973TeI, a material with both giant bulk Rashba effect and ferromagnetism, can reverse its magnetization by self-generated spin–orbit torque. Through first-principles calculation, it is found that the giant bulk Rashba effect arises from both bulk space inversion asymmetry and strong spin–orbital coupling, while the ferromagnetism originates from the itinerant d-electrons of doped element vanadium. More importantly, its field-like spin–orbit torque efficiency is determined to be as high as 4.53 × 10−4 mT/(A cm−2), which is more than two orders of magnitude higher than that typically observed in magnetic heterostructures. It is further shown that by using such magnetic bulk Rashba material to form a homogenous spintronic device, the power consumption for magnetization switching can be significantly reduced.
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