Herein, a series of (Sn 1.06 Te) 1−x -(InSb) x (x = 0, 0.025, 0.05, 0.075) samples are fabricated, and their thermoelectric performances are studied. The all-scale structure defects containing the atomic-scale In doping defects, the nanoscale Sb precipitates, and the mesoscale grain boundary scatter phonons collectively in a wide range of frequencies to give the ultralow lattice thermal conductivity. Concurrently, the incorporation of InSb decreases carrier concentration with marginal loss in carrier mobility, resulting in a little variation of electrical properties over a wide temperature range. The significantly decreased thermal conductivity and the preserved high power factor lead to a maximum ZT value of ∼0.84 at 823 K in the (Sn 1.06 Te) 0.95 (InSb) 0.05 sample. This strategy of rapidly constructing all-scale structure defects could be applied to other thermoelectric systems to enhance thermoelectric performance. KEYWORDS: thermoelectric material, (Sn 1.06 Te) 1−x -(InSb) x , all-scale structure defects, ultralow lattice thermal conductivity, preserved high power factor

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SnTe is an emerging IV–VI metal chalcogenides, but its low Seebeck coefficient and high thermal conductivity mainly originating from the high hole concentration limit its thermoelectric performance. In this work,...

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