BiFeO3 thin films on different substrates were prepared via Sol-gel method. X-ray diffraction patterns indicated all the films were well-crystallized and gave X-ray peaks corresponding to BiFeO3. The influence of different annealing temperatures and substrates to the Raman spectra was investigated. The Raman spectra of the 750 o C-annealed films gave almost the completed E modes. Compared with the film deposited on Si substrate, the positions of E modes peaks in Raman spectra of the film deposited on LNO-coated Si substrate shifted to higher frequency regions and the existence of the stress between the BiFeO3 films and the substrates was considered to cause the shift.
Ferroelectric Bi 2 VO 5.5 (BVO) thin films have been successfully fabricated on p-type Si (100) substrates by sol-gel method. The microstructures and surface morphologies of BVO thin films were studied by X-ray diffraction and atomic force microscopy, respectively. Bi 2 VO 5.5 thin films show c-preferred orientation, which indicates that the films match very well with the p-type Si substrate. Raman spectra measurements were carried out to study the lattice vibration modes of BVO thin films. Optical properties of the BVO were investigated due to their potential optical applications. And the optical properties of the BVO thin films have been studied by spectroscopic ellipsometric measurements in the wavelength from 400 nm to 1700 nm. The optical constant refractive index and extinction coefficient have been obtained.The resulting refractive index and extinction coefficient of BVO films show difference due to the different annealing process of the films, which implies the importance of the post annealing process. The increase of the refractive index could be understood by the higher density of the BVO films caused by the crystallization after annealing process. TheOptical properties indicate that BVO films have potential applications in optical devices.
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