The authors present magnetotransport measurements of electron dephasing characteristics in wurtzite indium nitride thin films grown by metal-organic vapor phase epitaxy. Pronounced weak antilocalization effects have been observed at low magnetic fields due to the presence of strong spin-orbit interactions at the top of the valence band. With the aid of the weak localization theory, they are able to demonstrate that the dephasing is connected to three separate processes of the spin-orbit, electron-phonon, and extended structural defect scatterings. The spin-orbit splitting has been determined to be 5.7meV. They have also shown that both the magnetoresistivity and resistivity can be explained using the same temperature-dependent dephasing times.
Lattice defects induced by ion implantation into SiC have been widely investigated in the decades by various techniques. One of the non-destructive techniques suitable to study the lattice defects in SiC is the optical characterization. In this work, confocal Raman scattering spectroscopy and photoluminescence spectrum have been used to study the effects of 134-keV
H
2
+
implantation and thermal treatment in the microstructure of 6H-SiC single crystal. The radiation-induced changes in the microstructure were assessed by integrating Raman-scattering peaks intensity and considering the asymmetry of Raman-scattering peaks. The integrated intensities of Raman scattering spectroscopy and photoluminescence spectrum decrease with increasing the fluence. The recovery of the optical intensities depends on the combination of the implantation temperature and the annealing temperature with the thermal treatment from 700 °C to 1100 °C. The different characterizations of Raman scattering spectroscopy and photoluminescence spectrum are compared and discussed in this study.
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