This work proposes CoMET, a fast and energyefficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a composite structure -a ferromagnet (FM) with in-plane magnetic anisotropy (IMA) placed on top of an intra-gate FM interconnect with perpendicular magnetic anisotropy (PMA). Through the magnetoelectric (ME) effect, the input voltage nucleates a domain wall (DW) at the input end of the PMA-FM interconnect. An applied current then rapidly propagates the DW towards the output FE structure, where the inverse-ME effect generates an output voltage. This voltage is propagated to the input of the next CoMET device using a novel circuit structure that enables efficient device cascading. The material parameters for CoMET are optimized by systematically exploring the impact of parameter choices on device performance. Simulations on a 7nm CoMET device show fast, low-energy operation, with a delay/energy of 99ps/68aJ for INV and 135ps/85aJ for MAJ3.
Magnetoelectric spin-orbit (MESO) logic is a promising spin-based post-CMOS logic computation paradigm. This paper explores the application of the basic MESO device concept to more complex logic structures. A simulation framework is first developed to facilitate the performance evaluation of MESO-based circuits. Based on the analysis, it is seen that inadvertent logic errors may potentially be introduced in cascaded MESO stages due to sneak paths, and solutions for overcoming this problem with a short pulse and two-phase evaluation are discussed. Next, the generalization of the MESO inverter structure to majority logic gates is shown. Two implementations, based on different physical mechanisms, are presented and a relative analysis of their speed and power characteristics is provided. INDEX TERMS Inverse spin-orbit coupling (ISOC), magnetoelectric (ME) coupling, majority gate, simulation, spintronics.
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