2D materials with multi-phase and multi-element crystals such as transition atoms (V-, Cr-, Mn-, Fe-, Cd-, Pt-, and Pd-) based chalcogenides (TMCs) and phosphorous chalcogenides (TMPCs), offer a unique platform to explore novel physical phenomena including 2D ferromagnetism, 2D superconductivity, high-Tc topological superconductivity, Majorana bound states, and many-body excitons 1-9 . However, synthesis of a singlephase/composition of these 2D crystals is still challenging since the growth kinetics is difficult to be controlled during chemical vapor deposition (CVD) 10 . Here, we unravel a competitive-chemical reaction growth mechanism via controlling the kinetic parameters to manipulate the nucleation and growth rate. Based on this mechanism, chemical reactions of 2D crystals with the defined phase, controllable structure, and tunable component can be realized. Specifically, we synthesized 67 types of 2D compounds including 27 binary metal chalcogenides with different chemical compositions, 12 ternary metal phosphorous chalcogenides, 24 alloys, and 4 heterostructures. The ferromagnetism and superconductivtity in FeXy can be tuned with y value, such as superconductivity observed in FeX and ferromagnetism in the FeS2 monolayers, demonstrating the high quality of as-
Hexagonal boron nitride is not only a promising functional material for the development of two-dimensional optoelectronic devices but also a good candidate for quantum sensing thanks to the presence of quantum emitters in the form of atom-like defects. Their exploitation in quantum technologies necessitates understanding their coherence properties as well as their sensitivity to external stimuli. In this work, we probe the strain configuration of boron vacancy centers (VB − ) created by ion implantation in h-BN flakes thanks to wide-field spatially resolved optically detected magnetic resonance and submicro Raman spectroscopy. Our experiments demonstrate the ability of VB − for quantum sensing of strain and, given the omnipresence of h-BN in 2D-based devices, open the door for in situ imaging of strain under working conditions.
Symmetries, quantum geometries and electronic correlations are among the most important ingredients of condensed matters, and lead to nontrivial phenomena in experiments, for example, non-reciprocal charge transport. Of particular interest is whether the non-reciprocal transport can be manipulated. Here, we report the controllable large non-reciprocal charge transport in the intrinsic magnetic topological insulator MnBi2Te4. The current direction relevant resistance is observed at chiral edges, which is magnetically switchable, edge position sensitive and stacking sequence controllable. Applying gate voltage can also effectively manipulate the non-reciprocal response. The observation and manipulation of non-reciprocal charge transport reveals the fundamental role of chirality in charge transport of MnBi2Te4, and pave ways to develop van der Waals spintronic devices by chirality engineering.
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