Slope instability occurs in landfills owing to increased internal temperatures. However, strength characteristic tests for solid waste (SW) and landfill slope stability (SS) calculations that consider temperature variations are scarce in the literature. In this study, we conducted triaxial tests on SW under a range of temperature conditions and proposed the circular slide method (CSM) for calculating SS in consideration of temperature effects. SW cohesion decreased linearly with increasing temperature, whereas the internal friction angle remained essentially unchanged. Our results showed that higher temperatures reduced the SW shear strength, changing the most dangerous sliding arc away from the slope toe. The landfill slope safety factor decreased by more than 20% with an increase of the maximum temperature from 20°C to 50°C. Reduction of the leachate level (LL) led to a decrease in the landfill high-temperature zone and the safety factor increased according to LL and temperature distribution. If cooling pipes are used to control the SW temperature, we recommend arranging the cooling pipes on the landfill liner. The proposed CSM can be used to analyse landfill SS.

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Purpose Low-Ag SAC solder will lead to a series of problems, such as increased the melting range and declined the solderability and so on. These research studies do not have too much impact on the improvement of solders’ performance but were difficult to achieve satisfactory results. It is urgent to develop new soldering technology to avoid the bottleneck of lead-free solder. low-temperature-stirring soldering and ultrasonic-assisted soldering was developed in the authors’ early work, but slag inclusion and pore would gather and grow up to lead decreasing of the shear strength. In this paper, Cu/SAC0307 +Zn power/Cu joints with ultrasonic-assisted at low-temperature was successfully achieved. Design/methodology/approach 45um Zn-powder and SAC0307 No.4 solder powder were mixed to fill the Cu-Cu joint, and the content of Zn-powder were 0 and 5%, 7.5% and 10%, 12.5% and 15% respectively. During the soldering process under ambient atmosphere %252C the heating platform provided a constant 220%253 F and the ultrasonic vibrator applied a constant pressure of 4 MPa to the copper substrate. The soldering process was completed after holding 70 s at 300 W. Findings The Zn particles made the IMC at the joint interface and in the soldering seam from scallop-type Cu6Sn5 to flat-type Cu5Zn8. The shear strength of joints without Zn was only 12.43 MPa, the shear strength of joints with 10% Zn reached a peak of 34.25 MPa, and the shear strength of joints containing 10% Zn was 63.71% higher than that of joints without zinc particles, and then the shear strength decreased. In addition, with the increase of zinc content, the fracture mode of the joint changed from the brittle fracture of the original layered tears to the mixed tough and brittle fracture. Originality/value A new method that Zn micron-size powders and SAC0307 micron-size powders was mixed to fill the joint, and successfully achieved micro-joining of Cu/Cu under ultrasonic-assisted without flux at low-temperature.

The polarization modulation of Cherenkov diffraction radiation facilitates intriguing potentials to explore material properties and advanced technologies such as free-electron lasers; however, it is still challenging to achieve polarization modulation. Here, we propose versatile on-chip silicon-patterned silicon-nitride photonic integrated waveguides to produce a direction-dependent polarization modulator for Cherenkov diffraction radiation. The radiation angle can be manipulated arbitrarily by arranging the period of the grating and the propagation direction of the electron beam. Furthermore, the polarization and the number of output directions of the radiation can be controlled by the gradient metasurfaces. In particular, the linear, left-, and right-handed circular polarized Cherenkov diffraction radiation could be generated in separate radiation directions. Our results pave the way to modulate the polarization of free-electron radiation and further promote the development of on-chip light sources.