Abstract-One important function of process mining is to manage business process in order to detect the abnormal. A new process mining method is proposed based on process mining technology. The method will form a new process model that is more extensible relative to original process model. Then we use a effective method re-executing our event logs based on this new process model. Several kinds of abnormal are defined: task lost; task is excess; task replaced; tasks disordered. Due to the define of abnormal type, the re-executed results will show us the concrete mistakes about abnormal behaviors and help us understood and analysis the business process easily.
On the basis of mirror reflection characteristics, the article analyzes the relation between the space plane that rotates about a point and reflective light change, designs mirror reflection and orientational irradiation automatic tracking control model, establishes signal conversion equation, drive speed selection equation, orthogonal axis rotation vector equation and reflection mirror rotation equations, sets the functional relations among the light incident angle, reflective angle, signal colletion and speed rotation as a list. Then, in combination with the directional reflection characteristics of the sunlight, the use method of the model are presented.
In this work, we present an analytical model of dynamic power losses for enhancement-mode AlGaN/GaN high-electron-mobility transistor power devices (eGaN HEMTs). To build this new model, the dynamic on-resistance (Rdson) is first accurately extracted by our ex-traction circuit based on a double-diode isolation (DDI) method for a high operating frequency up to 1 MHz and a large drain voltage up to 600 V, thus the unique problem of an increase in the dynamic Rdson is presented. Then the impact of the current operation mode on the on/off transi-tion time is evaluated by a dual-pulse-current-mode test (DPCT) which including a discontinu-ous conduction mode (DCM) and a continuous conduction mode (CCM), thus the transition time is revised for different current mode. Afterward the discrepancy between the drain current and the real channel current is qualitative investigated by an external shunt capacitance (ESC) meth-od, thus the losses due to device parasitic capacitance are also taken into account. After these improvements, the dynamic model will be more compatible for eGaN HEMTs. Finally, the dynamic power losses calculated by this model are verified to be in good agreement with experimental results. Based on this model, we propose a superior solution with qua-si-resonant mode (QRM) to achieve lossless switching and accelerate switching speed.
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