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The mechanisms of creation of electron-hole trapping centers in LiKSO4 have been investigated by the methods of vacuum and thermal activation spectroscopy. It is shown that electron-hole trapping centers are formed during the trapping of electrons by anionic complexes and localization of a hole in the lattice in the form of the radical SO4−. The appearance of phosphorescence at 3.0-3.1 eV, 2.6-2.7 eV and 2.3-2.4 eV confirms the creation of electron-hole trap centers.

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The methods of vacuum-ultraviolet and thermal activation spectroscopy were used to measure the excitation spectra of impurity radiation in the fundamental absorption band of K 2 SO 4-Cu crystals at 15 K and 300 K. An energy transfer was detected from the base to Cu + impurities. The band gap of crystals K 2 SO 4 was estimated. In K 2 SO 4-Cu crystals, recombination radiation bands were detected at 2.95 ÷ 3.0 eV corresponding to electron-hole capture centers.