This paper studies the relationship between the parameters in LLC resonant circuit based on the fundamental wave analysis method, analyzes the gain curve and the soft-switching conditions of the power tube, gives the selection method of the parameters k and Q and calculates the resonant component parameters. In this paper, a closed-loop frequency modulation control method is used to control the DC output voltage of the resonant converter. At the same time, mathematical modeling and analysis are carried out for the electrochemical model and thermal model of the proton exchange membrane (PEM) hydrogen production electrolyzer, and the Simulink simulation tool is used to complete the joint simulation of the PEM electrolysis model and the LLC resonant converter. The simulation results fully reflect the actual control process.
Based on theoretical analysis and computer-aided simulation, optimized design principles for Si/SiGe PMOSFET are given in this paper, which include choice of gate materials, determination of germanium percentage and profile in SiGe channel, optimization of thickness of dioxide and silicon cap layer, and adjustment of threshold voltage. In the light of these principles, a SiGe PMOSFET is designed and fabricated successfully. Measurement indicates that the SiGe PMOSFET's (L=2ttm) transconductance is 45 mS/mm (300K) and 92mS/mm (77K), while that is 33 mS/mm (300K) and 39mS/mm (77K) in Si PMOSFET with the same structure.
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