Metal halide perovskites, such as MAPbX 3 (X = Cl, Br, or I) have recently garnered tremendous research efforts for a broad range of photovoltaic and optoelectronic applications, [1][2][3][4][5][6][7] due to their favorable optical and electronic properties such as tunable bandgap, [2] high absorption coefficient, [3] and high photoluminescence quantum yield. [4] In particular, the power-conversion efficiencies of perovskite solar cells have been boosted to over 23% (certified) from a starting point of 3.8% over the past few years. [4][5][6][7][8] Apart from the rapid developments of materials and device architectures, a thorough understanding of fundamental physical processes including charge-carrier transport will be needed for further breakthroughs in device performance. However, a comprehensive physical picture of the intrinsic charge transport in the metal halide perovskites, which is key Optoelectronic devices based on metal halide perovskites, including solar cells and light-emitting diodes, have attracted tremendous research attention globally in the last decade. Due to their potential to achieve high carrier mobilities, organic-inorganic hybrid perovskite materials can enable high-performance, solution-processed field-effect transistors (FETs) for next-generation, low-cost, flexible electronic circuits and displays. However, the performance of perovskite FETs is hampered predominantly by device instabilities, whose origin remains poorly understood. Here, perovskite single-crystal FETs based on methylammonium lead bromide are studied and device instabilities due to electrochemical reactions at the interface between the perovskite and gold source-drain top contacts are investigated. Despite forming the contacts by a gentle, soft lamination method, evidence is found that even at such "ideal" interfaces, a defective, intermixed layer is formed at the interface upon biasing of the device. Using a bottom-contact, bottom-gate architecture, it is shown that it is possible to minimize such a reaction through a chemical modification of the electrodes, and this enables fabrication of perovskite single-crystal FETs with high mobility of up to ≈15 cm 2 V −1 s −1 at 80 K. This work addresses one of the key challenges toward the realization of high-performance solution-processed perovskite FETs. Field-Effect Transistors

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Early detection of ovarian cancer, the most lethal type of gynecologic cancer, can dramatically improve the efficacy of available treatment strategies. However, few screening tools exist for rapidly and effectively diagnosing ovarian cancer in early stages. Here, we present a facile "lock-key" strategy, based on rapid, specific detection of plasma lysophosphatidic acid (LPA, an early stage biomarker) with polydiacetylenes (PDAs)-based probe, for the early diagnosis of ovarian cancer. This strategy relies on specifically inserting LPA "key" into the PDAs "lock" through the synergistic electrostatic and hydrophobic interactions between them, leading to conformation transition of the PDA backbone with a concomitant blue-to-red color change. The detailed mechanism underlying the high selectivity of PDAs toward LPA is revealed by comprehensive theoretical calculation and experiments. Moreover, the level of LPA can be quantified in plasma samples from both mouse xenograft tumor models and patients with ovarian cancer. Impressively, this approach can be introduced into a portable point-of-care device to successfully distinguish the blood samples of patients with ovarian cancer from those of healthy people, with 100% accuracy. This work provides a valuable portable tool for early diagnosis of ovarian cancer and thus holds a great promise to dramatically improve the overall survival.

This study proved experimentally and theoretically that the property of triiodide anion provides a novel perspective for the design of high-efficiency radioiodine adsorbents.

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This article proposes and experimentally demonstrates an optically transparent and polarization‐insensitive metamaterial absorber in the terahertz (THz) frequencies. The absorber is formed by indium‐tin‐oxide (ITO) resistive films, providing efficient absorption with absorptivity of 94.1% at the peak absorption frequency of 120.8 GHz. We systematically investigate the surface current distribution and the power loss analysis, and explain the architecture of the absorber. Moreover, the absorber exhibits unique absorption properties at resonant frequencies, that is, featuring single‐band or dual‐band operation by changing the surface resistance of the ITO patterns. In addition, the experimental demonstration and measurement results are in good agreement with the simulated results. Most importantly, the fabricated absorber exhibits an optical transparency above 70% over the entire visible waveband, thereby enabling a wide range of applications such as optically transparent THz absorbers and detectors.

Due to their relatively low cost, large surface area and good chemical and physical properties, carbon nanofibers (CNFs) are attractive for the fabrication of electrodes for supercapacitors (SCs). However, their relatively low electrical conductivity has impeded their practical application. To this end, a novel active-screen plasma activation and deposition technology has been developed to deposit silver, platinum and palladium nanoparticles on activated CNFs surfaces to increase their specific surface area and electrical conductivity, thus improving the specific capacitance. The functionalised CNFs were fully characterised using scanning electron microscope (SEM), energy dispersive X-ray analysis (EDX) and X-ray diffraction (XRD) and their electrochemical properties were evaluated using cyclic voltammetry and electrochemical impedance spectroscopy. The results showed a significant improvement in specific capacitance, as well as electrochemical impedance over the untreated CNFs. The functionalisation of CNFs via environmental-friendly active-screen plasma technology provides a promising future for cost-effective supercapacitors with high power and energy density.