A negative-capacitance high electron mobility transistor (NC-HEMT) with low hysteresis in the subthreshold region is demonstrated in the wide bandgap AlGaN/GaN material system using sputtered BaTiO 3 as a "weak" ferroelectric gate in conjunction with a conventional SiN x dielectric. An enhancement in the capacitance for BaTiO 3 /SiN x gate stacks is observed in comparison to control structures with SiN x gate dielectrics directly indicating the negative capacitance contribution of the ferroelectric BaTiO 3 layer. A significant reduction in the minimum sub-threshold slope for the NC-HEMTs is obtained in contrast to standard metal-insulator-semiconductor HEMTs (MISHEMTs) with SiN x gate dielectrics -97.1 mV/decade vs 145.6 mV/decade -with almost no hysteresis in the I D -V G transfer curves. These results are promising for the integration of ferroelectric perovskite oxides with III-Nitride devices towards NC-FET switches with reduced power consumption.Negative-capacitance field-effect transistors (NC-FETs) have the potential to significantly reduce switching power consumption by lowering the sub-threshold slope (SS) below the Boltzmann limit of 60 mV/decade due to the internal voltage amplification provided by the ferroelectric film. [1,2] Extensive research is currently underway, primarily for Si transistors, in order to realize CMOScompatible, stable and reliable hysteresis-free NC-FETs for next generation logic switches. In addition to Si, NC-FETs have also been demonstrated for Ge, 2-D materials and InGaAs based channels. [2,3] The concept of an NC-FET is also useful for wide-bandgap materials towards monolithic integration of low-power logic with the high power-handling capabilities offered by these materials, as well as designing logic circuits for extreme environments such as radiation-hard and hightemperature applications. [4] AlGaN/GaN-based high electron mobility transistors (HEMTs) are fast

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In this paper, the experimental dynamics of a Duffing oscillatory system are studied for periodic motions. A Duffing oscillatory circuit is developed for the experimental study of periodic motions on the bifurcation trees. The coexisting asymmetric periodic motions are obtained experimentally. The analytical periodic motions in the Duffing oscillator are presented for comparison with experimental results. Because of hardware and data leakage of experimental instruments, the experimental result accuracy is much lower than the analytical results of periodic motions. To improve the experimental results accuracy, the high quality hardware and instruments should be adopted and the high resolution data acquisition systems should be adopted.