Thin films of Cu2ZnSnS4 (CZTS) were deposited on Pyrex substrates at various temperatures by spray pyrolysis technique from aqueous solution containing an economic stannous chloride (SnCl2) precursor for the tin and the effect of substrate temperature on the structural and opto-electronic properties was investigated. X-ray diffraction patterns and Raman spectroscopy reveal that all the CZTS films exhibited kesterite structure with preferential orientation along the (1 1 2) direction and some secondary phases. Also, they possessed different band gaps, which were found to lie between 1.52 and 1.81 eV, indicating that CZTS compound has absorbing properties favorable for applications in solar cell devices. Van der Pauw technique and Hall effect measurements were used to determine the electrical properties of CZTS films and the resistivity was of about 0.12 Ω cm for film grown at 280 °C.
Cu2ZnSnS4 (CZTS) thin film was deposited on glass substrate by spray pyrolysis technique using a methanolic solution. This film was annealed under nitrogen atmosphere for an hour at different annealing temperatures. The effect of the annealing temperature on composition, structure, morphology, electrical, and optical properties of CZTS films was investigated. Energy dispersive x-ray analysis showed that after the annealing process, the atomic ratio values tend to their stoichiometric values. Moreover, the X-ray diffraction (XRD) and Raman spectroscopy revealed a kesterite structure with (112) preferential orientation for both as-deposited and annealed CZTS films. Moreover, they exhibited an improvement in crystallinity after annealing which was confirmed by SEM analysis. The conductivity of the heated CZTS films showed also an important increase in crystallinity. The absorption edge shifted toward lower wavelengths leading to an increase in band gap energy for the annealed CZTS films.
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